Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm wh...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2012-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4769102 |
| _version_ | 1819060962978693120 |
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| author | Hong Ye Yuxin Song Yi Gu Shumin Wang |
| author_facet | Hong Ye Yuxin Song Yi Gu Shumin Wang |
| author_sort | Hong Ye |
| collection | DOAJ |
| description | Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 °C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts. |
| first_indexed | 2024-12-21T14:35:20Z |
| format | Article |
| id | doaj.art-829752e053fe4934bf1078b3f5653baf |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T14:35:20Z |
| publishDate | 2012-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-829752e053fe4934bf1078b3f5653baf2022-12-21T19:00:20ZengAIP Publishing LLCAIP Advances2158-32262012-12-0124042158042158-510.1063/1.4769102059204ADVLight emission from InGaAs:Bi/GaAs quantum wells at 1.3 μmHong Ye0Yuxin Song1Yi Gu2Shumin Wang3Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, SwedenDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, SwedenShanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, SwedenHighly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 °C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.http://dx.doi.org/10.1063/1.4769102 |
| spellingShingle | Hong Ye Yuxin Song Yi Gu Shumin Wang Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm AIP Advances |
| title | Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm |
| title_full | Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm |
| title_fullStr | Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm |
| title_full_unstemmed | Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm |
| title_short | Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm |
| title_sort | light emission from ingaas bi gaas quantum wells at 1 3 μm |
| url | http://dx.doi.org/10.1063/1.4769102 |
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