Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 μm wh...

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Bibliographic Details
Main Authors:	Hong Ye, Yuxin Song, Yi Gu, Shumin Wang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2012-12-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4769102

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