Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method
In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM s...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8438870/ |
| _version_ | 1818913138274205696 |
|---|---|
| author | Yapei Chen Yong Zhang Yuehang Xu Yan Sun Wei Cheng Haiyan Lu Fei Xiao Ruimin Xu |
| author_facet | Yapei Chen Yong Zhang Yuehang Xu Yan Sun Wei Cheng Haiyan Lu Fei Xiao Ruimin Xu |
| author_sort | Yapei Chen |
| collection | DOAJ |
| description | In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM simulation parameter extraction method to avoid serious discrepancies between the simulated EM field distribution and the real EM field distribution of the device. Terahertz parasitic effects, including the EM field discretization and multi-finger device field sharing, are observed. Compared with the previous 3-D EM simulation-assisted model, the new model in this paper demonstrates better results for multi-finger indium phosphide HBTs. |
| first_indexed | 2024-12-19T23:25:43Z |
| format | Article |
| id | doaj.art-829a230d80db48f59b41c5d297fa7f22 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T23:25:43Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-829a230d80db48f59b41c5d297fa7f222022-12-21T20:01:52ZengIEEEIEEE Access2169-35362018-01-016457724578110.1109/ACCESS.2018.28659298438870Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction MethodYapei Chen0https://orcid.org/0000-0003-3123-3547Yong Zhang1Yuehang Xu2https://orcid.org/0000-0003-1706-2681Yan Sun3Wei Cheng4Haiyan Lu5Fei Xiao6Ruimin Xu7EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, ChinaEHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, ChinaEHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, ChinaEHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, ChinaEHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, ChinaIn this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM simulation parameter extraction method to avoid serious discrepancies between the simulated EM field distribution and the real EM field distribution of the device. Terahertz parasitic effects, including the EM field discretization and multi-finger device field sharing, are observed. Compared with the previous 3-D EM simulation-assisted model, the new model in this paper demonstrates better results for multi-finger indium phosphide HBTs.https://ieeexplore.ieee.org/document/8438870/InP HBTterahertz band3D EM simulationtransistor model |
| spellingShingle | Yapei Chen Yong Zhang Yuehang Xu Yan Sun Wei Cheng Haiyan Lu Fei Xiao Ruimin Xu Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method IEEE Access InP HBT terahertz band 3D EM simulation transistor model |
| title | Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method |
| title_full | Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method |
| title_fullStr | Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method |
| title_full_unstemmed | Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method |
| title_short | Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method |
| title_sort | investigation of terahertz 3d em simulation on device modeling and a new inp hbt dispersive inter electrode impedance extraction method |
| topic | InP HBT terahertz band 3D EM simulation transistor model |
| url | https://ieeexplore.ieee.org/document/8438870/ |
| work_keys_str_mv | AT yapeichen investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod AT yongzhang investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod AT yuehangxu investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod AT yansun investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod AT weicheng investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod AT haiyanlu investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod AT feixiao investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod AT ruiminxu investigationofterahertz3demsimulationondevicemodelingandanewinphbtdispersiveinterelectrodeimpedanceextractionmethod |