Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method

Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method

In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM s...

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Bibliographic Details
Main Authors: Yapei Chen, Yong Zhang, Yuehang Xu, Yan Sun, Wei Cheng, Haiyan Lu, Fei Xiao, Ruimin Xu
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
InP HBT
terahertz band
3D EM simulation
transistor model
Online Access:https://ieeexplore.ieee.org/document/8438870/

Internet

https://ieeexplore.ieee.org/document/8438870/

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