Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss
Abstract Improving the absorption of electromagnetic waves at low-frequency bands (2-8 GHz) is crucial for the increasing electromagnetic (EM) pollution brought about by the innovation of the fifth generation (5G) communication technology. However, the poor impedance matching and intrinsic attenuati...
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Nature Portfolio
2024-04-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-024-47537-5 |
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author | Bo Cai Lu Zhou Pei-Yan Zhao Hua-Long Peng Zhi-Ling Hou Pengfei Hu Li-Min Liu Guang-Sheng Wang |
author_facet | Bo Cai Lu Zhou Pei-Yan Zhao Hua-Long Peng Zhi-Ling Hou Pengfei Hu Li-Min Liu Guang-Sheng Wang |
author_sort | Bo Cai |
collection | DOAJ |
description | Abstract Improving the absorption of electromagnetic waves at low-frequency bands (2-8 GHz) is crucial for the increasing electromagnetic (EM) pollution brought about by the innovation of the fifth generation (5G) communication technology. However, the poor impedance matching and intrinsic attenuation of material in low-frequency bands hinders the development of low-frequency electromagnetic wave absorbing (EMWA) materials. Here we propose an interface-induced dual-pinning mechanism and establish a magnetoelectric bias interface by constructing bilayer core-shell structures of NiFe2O4 (NFO)@BiFeO3 (BFO)@polypyrrole (PPy). Such heterogeneous interface could induce distinct magnetic pinning of the magnetic moment in the ferromagnetic NFO and dielectric pinning of the dipole rotation in PPy. The establishment of the dual-pinning effect resulted in optimized impedance and enhanced attenuation at low-frequency bands, leading to better EMWA performance. The minimum reflection loss (RLmin) at thickness of 4.43 mm reaches -65.30 dB (the optimal absorption efficiency of 99.99997%), and the effective absorption bandwidth (EAB) can almost cover C-band (4.72 ~ 7.04 GHz) with low filling of 15.0 wt.%. This work proposes a mechanism to optimize low-frequency impedance matching with electromagnetic wave (EMW) loss and pave an avenue for the research of high-performance low-frequency absorbers. |
first_indexed | 2024-04-24T07:14:14Z |
format | Article |
id | doaj.art-82be880cee9b4852a3bce9edd018c3cd |
institution | Directory Open Access Journal |
issn | 2041-1723 |
language | English |
last_indexed | 2024-04-24T07:14:14Z |
publishDate | 2024-04-01 |
publisher | Nature Portfolio |
record_format | Article |
series | Nature Communications |
spelling | doaj.art-82be880cee9b4852a3bce9edd018c3cd2024-04-21T11:24:10ZengNature PortfolioNature Communications2041-17232024-04-011511910.1038/s41467-024-47537-5Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave lossBo Cai0Lu Zhou1Pei-Yan Zhao2Hua-Long Peng3Zhi-Ling Hou4Pengfei Hu5Li-Min Liu6Guang-Sheng Wang7School of Chemistry, Beihang UniversitySchool of Chemistry, Beihang UniversitySchool of Chemistry, Beihang UniversitySchool of Chemistry, Beihang UniversityCollege of Mathematics and Physics & Beijing Key Laboratory of Environmentally Harmful Chemical Analysis, Beijing University of Chemical TechnologyResearch Institute of Aero-Engine, Beihang UniversitySchool of Physics, Beihang UniversitySchool of Chemistry, Beihang UniversityAbstract Improving the absorption of electromagnetic waves at low-frequency bands (2-8 GHz) is crucial for the increasing electromagnetic (EM) pollution brought about by the innovation of the fifth generation (5G) communication technology. However, the poor impedance matching and intrinsic attenuation of material in low-frequency bands hinders the development of low-frequency electromagnetic wave absorbing (EMWA) materials. Here we propose an interface-induced dual-pinning mechanism and establish a magnetoelectric bias interface by constructing bilayer core-shell structures of NiFe2O4 (NFO)@BiFeO3 (BFO)@polypyrrole (PPy). Such heterogeneous interface could induce distinct magnetic pinning of the magnetic moment in the ferromagnetic NFO and dielectric pinning of the dipole rotation in PPy. The establishment of the dual-pinning effect resulted in optimized impedance and enhanced attenuation at low-frequency bands, leading to better EMWA performance. The minimum reflection loss (RLmin) at thickness of 4.43 mm reaches -65.30 dB (the optimal absorption efficiency of 99.99997%), and the effective absorption bandwidth (EAB) can almost cover C-band (4.72 ~ 7.04 GHz) with low filling of 15.0 wt.%. This work proposes a mechanism to optimize low-frequency impedance matching with electromagnetic wave (EMW) loss and pave an avenue for the research of high-performance low-frequency absorbers.https://doi.org/10.1038/s41467-024-47537-5 |
spellingShingle | Bo Cai Lu Zhou Pei-Yan Zhao Hua-Long Peng Zhi-Ling Hou Pengfei Hu Li-Min Liu Guang-Sheng Wang Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss Nature Communications |
title | Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss |
title_full | Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss |
title_fullStr | Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss |
title_full_unstemmed | Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss |
title_short | Interface-induced dual-pinning mechanism enhances low-frequency electromagnetic wave loss |
title_sort | interface induced dual pinning mechanism enhances low frequency electromagnetic wave loss |
url | https://doi.org/10.1038/s41467-024-47537-5 |
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