Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†
Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron spu...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Hitit University
2021-03-01
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| Series: | Hittite Journal of Science and Engineering |
| Subjects: | |
| Online Access: | https://dergipark.org.tr/tr/download/article-file/1676223 |
| _version_ | 1797662654298324992 |
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| author | Merve Acar Emre Gür Mehmet Ertuğrul Soheil Mobtakeri |
| author_facet | Merve Acar Emre Gür Mehmet Ertuğrul Soheil Mobtakeri |
| author_sort | Merve Acar |
| collection | DOAJ |
| description | Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices. |
| first_indexed | 2024-03-11T19:03:27Z |
| format | Article |
| id | doaj.art-82cbb0a30baa493889c54ed2bee8b8fe |
| institution | Directory Open Access Journal |
| issn | 2148-4171 |
| language | English |
| last_indexed | 2024-03-11T19:03:27Z |
| publishDate | 2021-03-01 |
| publisher | Hitit University |
| record_format | Article |
| series | Hittite Journal of Science and Engineering |
| spelling | doaj.art-82cbb0a30baa493889c54ed2bee8b8fe2023-10-10T11:17:28ZengHitit UniversityHittite Journal of Science and Engineering2148-41712021-03-01811510.17350/HJSE19030000206150Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†Merve Acar0Emre Gür1Mehmet Ertuğrul2Soheil Mobtakeri3Atatürk UnviersityAtatürk UniversityAtatürk UniversityAtatürk UniversityTransition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide (WS2) thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log (I)-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.https://dergipark.org.tr/tr/download/article-file/16762232d materialstmdcws22d/3d heterojunctions |
| spellingShingle | Merve Acar Emre Gür Mehmet Ertuğrul Soheil Mobtakeri Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† Hittite Journal of Science and Engineering 2d materials tmdc ws2 2d/3d heterojunctions |
| title | Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† |
| title_full | Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† |
| title_fullStr | Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† |
| title_full_unstemmed | Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† |
| title_short | Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)† |
| title_sort | fabrication and analysis of 2d 3d heterojunction between continuous few layer ws2 film and si 100 † |
| topic | 2d materials tmdc ws2 2d/3d heterojunctions |
| url | https://dergipark.org.tr/tr/download/article-file/1676223 |
| work_keys_str_mv | AT merveacar fabricationandanalysisof2d3dheterojunctionbetweencontinuousfewlayerws2filmandsi100 AT emregur fabricationandanalysisof2d3dheterojunctionbetweencontinuousfewlayerws2filmandsi100 AT mehmetertugrul fabricationandanalysisof2d3dheterojunctionbetweencontinuousfewlayerws2filmandsi100 AT soheilmobtakeri fabricationandanalysisof2d3dheterojunctionbetweencontinuousfewlayerws2filmandsi100 |