Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†
Transition metal dichalcogenide (TDMCs) placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron spu...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hitit University
2021-03-01
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| Series: | Hittite Journal of Science and Engineering |
| Subjects: | |
| Online Access: | https://dergipark.org.tr/tr/download/article-file/1676223 |