Sidewall Modification Process for Trench Silicon Power Devices

Sidewall Modification Process for Trench Silicon Power Devices

In this study, trench sidewall modification processes were designed to improve profile uniformity and thereby enhance the electrical performance of silicon power devices in large-scale production. The effects of trench sidewall modification on the morphology, structure and electrical properties were...

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Bibliographic Details
Main Authors: Lei Jin, Zhuorui Tang, Long Chen, Guijiu Xie, Zhanglong Chen, Wei Wei, Jianghua Fan, Xiaoliang Gong, Ming Zhang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Electronics
Subjects:
silicon device
trench morphology
sidewall modification
dry etch
Online Access:https://www.mdpi.com/2079-9292/12/11/2385

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