Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor

Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor

It is essential to understand the barrier height, ideality factor, and role of inhomogeneities at the metal/semiconductor interfaces in nanowires for the development of next generation nanoscale devices. Here, we investigate the drain current (<i>I</i><sub>ds</sub>)–gate volt...

Full description

Bibliographic Details
Main Authors: Siva Pratap Reddy Mallem, Peddathimula Puneetha, Yeojin Choi, Seung Mun Baek, Dong-Yeon Lee, Ki-Sik Im, Sung Jin An
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Nanomaterials
Subjects:
wrap-gate transistor
nanowire
GaN
barrier height
inhomogeneities
Online Access:https://www.mdpi.com/2079-4991/13/24/3159

Similar Items

Similar Items