Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructure
Temperature dependent Raman spectra and photoluminescence, as well the Raman mapping of different parts in an individual Sn-doped CdS comb-like nanostructure reveal that the stronger electron–phonon coupling exist at the trunk-branch junctions than other parts. The Huang–Rhys factor was calculated a...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2015-01-01
|
| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/17/6/063024 |
| _version_ | 1797751237956861952 |
|---|---|
| author | G L Song S Guo X X Wang Z S Li B S Zou H M Fan R B Liu |
| author_facet | G L Song S Guo X X Wang Z S Li B S Zou H M Fan R B Liu |
| author_sort | G L Song |
| collection | DOAJ |
| description | Temperature dependent Raman spectra and photoluminescence, as well the Raman mapping of different parts in an individual Sn-doped CdS comb-like nanostructure reveal that the stronger electron–phonon coupling exist at the trunk-branch junctions than other parts. The Huang–Rhys factor was calculated and further confirms that the strong electron–phonon correlation at the junction. The localized deformation from the Sn dopant in the lattice leads to strong electron–phonon coupling at the local junction, which is proved by the scanning transmission electron microscope and energy dispersion spectrum. Moreover, the lifetime of near-band-edge emission and deep-level emission drastically increase with decreasing temperature, which both relate to the localized electron–phonon coupling and relaxation process. This work provides a clear description of the localized carrier correlation in the cross junction part of these branched nanostructures, which can be used to modulate the optoelectronic performance of micro/nanodevices. |
| first_indexed | 2024-03-12T16:44:36Z |
| format | Article |
| id | doaj.art-831572f85f124da2819c96d233d25ce9 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:44:36Z |
| publishDate | 2015-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-831572f85f124da2819c96d233d25ce92023-08-08T14:17:56ZengIOP PublishingNew Journal of Physics1367-26302015-01-0117606302410.1088/1367-2630/17/6/063024Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructureG L Song0S Guo1X X Wang2Z S Li3B S Zou4H M Fan5R B Liu6Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing100081, People’s Republic of ChinaBeijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing100081, People’s Republic of ChinaBeijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing100081, People’s Republic of ChinaBeijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing100081, People’s Republic of ChinaBeijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing100081, People’s Republic of ChinaSchool of Chemical Engineering, North-West University , Xian 710069, People’s Republic of ChinaBeijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing100081, People’s Republic of ChinaTemperature dependent Raman spectra and photoluminescence, as well the Raman mapping of different parts in an individual Sn-doped CdS comb-like nanostructure reveal that the stronger electron–phonon coupling exist at the trunk-branch junctions than other parts. The Huang–Rhys factor was calculated and further confirms that the strong electron–phonon correlation at the junction. The localized deformation from the Sn dopant in the lattice leads to strong electron–phonon coupling at the local junction, which is proved by the scanning transmission electron microscope and energy dispersion spectrum. Moreover, the lifetime of near-band-edge emission and deep-level emission drastically increase with decreasing temperature, which both relate to the localized electron–phonon coupling and relaxation process. This work provides a clear description of the localized carrier correlation in the cross junction part of these branched nanostructures, which can be used to modulate the optoelectronic performance of micro/nanodevices.https://doi.org/10.1088/1367-2630/17/6/063024CdS branched nanostructuretemperature-dependent Ramanphotoluminescenceelectron-phonon coupling |
| spellingShingle | G L Song S Guo X X Wang Z S Li B S Zou H M Fan R B Liu Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructure New Journal of Physics CdS branched nanostructure temperature-dependent Raman photoluminescence electron-phonon coupling |
| title | Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructure |
| title_full | Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructure |
| title_fullStr | Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructure |
| title_full_unstemmed | Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructure |
| title_short | Temperature dependent raman and photoluminescence of an individual Sn-doped CdS branched nanostructure |
| title_sort | temperature dependent raman and photoluminescence of an individual sn doped cds branched nanostructure |
| topic | CdS branched nanostructure temperature-dependent Raman photoluminescence electron-phonon coupling |
| url | https://doi.org/10.1088/1367-2630/17/6/063024 |
| work_keys_str_mv | AT glsong temperaturedependentramanandphotoluminescenceofanindividualsndopedcdsbranchednanostructure AT sguo temperaturedependentramanandphotoluminescenceofanindividualsndopedcdsbranchednanostructure AT xxwang temperaturedependentramanandphotoluminescenceofanindividualsndopedcdsbranchednanostructure AT zsli temperaturedependentramanandphotoluminescenceofanindividualsndopedcdsbranchednanostructure AT bszou temperaturedependentramanandphotoluminescenceofanindividualsndopedcdsbranchednanostructure AT hmfan temperaturedependentramanandphotoluminescenceofanindividualsndopedcdsbranchednanostructure AT rbliu temperaturedependentramanandphotoluminescenceofanindividualsndopedcdsbranchednanostructure |