Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window
Abstract Photoelectric properties of the metamorphic InAs/In x Ga1 − x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiome...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-04-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2524-3 |
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| author | Sergii Golovynskyi Oleksandr I. Datsenko Luca Seravalli Giovanna Trevisi Paola Frigeri Ivan S. Babichuk Iuliia Golovynska Junle Qu |
| author_facet | Sergii Golovynskyi Oleksandr I. Datsenko Luca Seravalli Giovanna Trevisi Paola Frigeri Ivan S. Babichuk Iuliia Golovynska Junle Qu |
| author_sort | Sergii Golovynskyi |
| collection | DOAJ |
| description | Abstract Photoelectric properties of the metamorphic InAs/In x Ga1 − x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of In x Ga1 − x As cladding layer have been grown: indium content x was 0.15, 0.24, 0.28, and 0.31. InAs/In0.15Ga0.85As QD structure was found to be photosensitive in the telecom range at 1.3 μm. As x increases, a redshift was observed for all the samples, the structure with x = 0.31 was found to be sensitive near 1.55 μm, i.e., at the third telecommunication window. Simultaneously, only a slight decrease in the QD PC was recorded for increasing x, thus confirming a good photoresponse comparable with the one of In0.15Ga0.75As structures and of GaAs-based QD nanostructures. Also, the PC reduction correlate with the similar reduction of photoluminescence intensity. By simulating theoretically the quantum energy system and carrier localization in QDs, we gained insight into the PC mechanism and were able to suggest reasons for the photocurrent reduction, by associating them with peculiar behavior of defects in such a type of structures. All this implies that metamorphic QDs with a high x are valid structures for optoelectronic infrared light-sensitive devices. |
| first_indexed | 2024-03-12T09:08:02Z |
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| id | doaj.art-834be4d5801e4cc3b59b60f6a205fc6a |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:08:02Z |
| publishDate | 2018-04-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-834be4d5801e4cc3b59b60f6a205fc6a2023-09-02T15:10:38ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-04-011311910.1186/s11671-018-2524-3Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm WindowSergii Golovynskyi0Oleksandr I. Datsenko1Luca Seravalli2Giovanna Trevisi3Paola Frigeri4Ivan S. Babichuk5Iuliia Golovynska6Junle Qu7Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen UniversityDepartment of Physics, Taras Shevchenko National University of KyivInstitute of Materials for Electronics and Magnetism, CNR-IMEMInstitute of Materials for Electronics and Magnetism, CNR-IMEMInstitute of Materials for Electronics and Magnetism, CNR-IMEMKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen UniversityKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen UniversityAbstract Photoelectric properties of the metamorphic InAs/In x Ga1 − x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of In x Ga1 − x As cladding layer have been grown: indium content x was 0.15, 0.24, 0.28, and 0.31. InAs/In0.15Ga0.85As QD structure was found to be photosensitive in the telecom range at 1.3 μm. As x increases, a redshift was observed for all the samples, the structure with x = 0.31 was found to be sensitive near 1.55 μm, i.e., at the third telecommunication window. Simultaneously, only a slight decrease in the QD PC was recorded for increasing x, thus confirming a good photoresponse comparable with the one of In0.15Ga0.75As structures and of GaAs-based QD nanostructures. Also, the PC reduction correlate with the similar reduction of photoluminescence intensity. By simulating theoretically the quantum energy system and carrier localization in QDs, we gained insight into the PC mechanism and were able to suggest reasons for the photocurrent reduction, by associating them with peculiar behavior of defects in such a type of structures. All this implies that metamorphic QDs with a high x are valid structures for optoelectronic infrared light-sensitive devices.http://link.springer.com/article/10.1186/s11671-018-2524-3NanostructureQuantum dotMetamorphicInAs/InGaAsPhotoconductivityPhotoluminescence |
| spellingShingle | Sergii Golovynskyi Oleksandr I. Datsenko Luca Seravalli Giovanna Trevisi Paola Frigeri Ivan S. Babichuk Iuliia Golovynska Junle Qu Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window Nanoscale Research Letters Nanostructure Quantum dot Metamorphic InAs/InGaAs Photoconductivity Photoluminescence |
| title | Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window |
| title_full | Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window |
| title_fullStr | Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window |
| title_full_unstemmed | Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window |
| title_short | Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window |
| title_sort | interband photoconductivity of metamorphic inas ingaas quantum dots in the 1 3 1 55 μm window |
| topic | Nanostructure Quantum dot Metamorphic InAs/InGaAs Photoconductivity Photoluminescence |
| url | http://link.springer.com/article/10.1186/s11671-018-2524-3 |
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