Heterostrain and temperature-tuned twist between graphene/h-BN bilayers

Abstract Two-dimensional materials stacked atomically at small twist angles enable the modification of electronic states, motivating twistronics. Here, we demonstrate that heterostrain can rotate the graphene flake on monolayer h-BN within a few degrees (− 4° to 4°), and the twist angle stabilizes a...

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Main Authors: Xing Yang, Bin Zhang
Format: Article
Language:English
Published: Nature Portfolio 2023-03-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-023-31233-3
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author Xing Yang
Bin Zhang
author_facet Xing Yang
Bin Zhang
author_sort Xing Yang
collection DOAJ
description Abstract Two-dimensional materials stacked atomically at small twist angles enable the modification of electronic states, motivating twistronics. Here, we demonstrate that heterostrain can rotate the graphene flake on monolayer h-BN within a few degrees (− 4° to 4°), and the twist angle stabilizes at specific values with applied constant strains, while the temperature effect is negligible in 100–900 K. The band gaps of bilayers can be modulated from ~ 0 to 37 meV at proper heterostrain and twist angles. Further analysis shows that the heterostrain modulates the interlayer energy landscape by regulating Moiré pattern evolution. The energy variation is correlated with the dynamic instability of different stacking modes of bilayers, and arises from the fluctuation of interlayer repulsive interaction associated with p-orbit electrons. Our results provide a mechanical strategy to manipulate twist angles of graphene/h-BN bilayers, and may facilitate the design of rotatable electronic nanodevices.
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spelling doaj.art-834cde31813948fda2f6f29de73a634a2023-03-22T10:59:37ZengNature PortfolioScientific Reports2045-23222023-03-011311810.1038/s41598-023-31233-3Heterostrain and temperature-tuned twist between graphene/h-BN bilayersXing Yang0Bin Zhang1State Key Laboratory of Mechanics and Control of Mechanical Structures, and College of Aerospace Engineering, Nanjing University of Aeronautics and AstronauticsState Key Laboratory of Mechanics and Control of Mechanical Structures, and College of Aerospace Engineering, Nanjing University of Aeronautics and AstronauticsAbstract Two-dimensional materials stacked atomically at small twist angles enable the modification of electronic states, motivating twistronics. Here, we demonstrate that heterostrain can rotate the graphene flake on monolayer h-BN within a few degrees (− 4° to 4°), and the twist angle stabilizes at specific values with applied constant strains, while the temperature effect is negligible in 100–900 K. The band gaps of bilayers can be modulated from ~ 0 to 37 meV at proper heterostrain and twist angles. Further analysis shows that the heterostrain modulates the interlayer energy landscape by regulating Moiré pattern evolution. The energy variation is correlated with the dynamic instability of different stacking modes of bilayers, and arises from the fluctuation of interlayer repulsive interaction associated with p-orbit electrons. Our results provide a mechanical strategy to manipulate twist angles of graphene/h-BN bilayers, and may facilitate the design of rotatable electronic nanodevices.https://doi.org/10.1038/s41598-023-31233-3
spellingShingle Xing Yang
Bin Zhang
Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
Scientific Reports
title Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
title_full Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
title_fullStr Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
title_full_unstemmed Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
title_short Heterostrain and temperature-tuned twist between graphene/h-BN bilayers
title_sort heterostrain and temperature tuned twist between graphene h bn bilayers
url https://doi.org/10.1038/s41598-023-31233-3
work_keys_str_mv AT xingyang heterostrainandtemperaturetunedtwistbetweengraphenehbnbilayers
AT binzhang heterostrainandtemperaturetunedtwistbetweengraphenehbnbilayers