Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability
Abstract Programmable devices can be easily switched between n‐type and p‐type devices by applying an electric field and are promising candidates for simplifying the currently used fabrication process and increasing programmable flexibility. This paper proposes a 2D WSe2/3D Ge heterojunction field‐e...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Wiley-VCH
2023-02-01
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Series: | Advanced Electronic Materials |
Subjects: | |
Online Access: | https://doi.org/10.1002/aelm.202200924 |