Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability

Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability

Abstract Programmable devices can be easily switched between n‐type and p‐type devices by applying an electric field and are promising candidates for simplifying the currently used fabrication process and increasing programmable flexibility. This paper proposes a 2D WSe2/3D Ge heterojunction field‐e...

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Bibliographic Details
Main Authors: Maolong Yang, Liming Wang, Yao Lu, Bo Wang, Ningning Zhang, Maliang Liu, Hui Guo, Dongdong Lin, Jincheng Zhang, Huiyong Hu
Format: Article
Language:English
Published: Wiley-VCH 2023-02-01
Series:Advanced Electronic Materials
Subjects:
2D/3D heterostructure
junction field‐effect transistors
programmable device
visible‐infrared photodetector
wavelength‐distinguishing
Online Access:https://doi.org/10.1002/aelm.202200924

Internet

https://doi.org/10.1002/aelm.202200924

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