Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>

SmB<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula> is a mixed valence topological Kondo insulator. To investigate the effect of substituting Sm with magnet...

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Main Authors: Monica Ciomaga Hatnean, Talha Ahmad, Marc Walker, Martin R. Lees, Geetha Balakrishnan
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/10/9/827
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author Monica Ciomaga Hatnean
Talha Ahmad
Marc Walker
Martin R. Lees
Geetha Balakrishnan
author_facet Monica Ciomaga Hatnean
Talha Ahmad
Marc Walker
Martin R. Lees
Geetha Balakrishnan
author_sort Monica Ciomaga Hatnean
collection DOAJ
description SmB<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula> is a mixed valence topological Kondo insulator. To investigate the effect of substituting Sm with magnetic Ce ions on the physical properties of samarium hexaboride, Ce-substituted SmB<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula> crystals were grown by the floating zone method for the first time as large, good quality single crystal boules. The crystal growth conditions are reported. Structural, magnetic and transport properties of single crystals of Sm<inline-formula><math display="inline"><semantics><msub><mrow/><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></semantics></math></inline-formula>Ce<inline-formula><math display="inline"><semantics><msub><mrow/><mi>x</mi></msub></semantics></math></inline-formula>B<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula> (<inline-formula><math display="inline"><semantics><mrow><mi>x</mi><mo>=</mo><mn>0.05</mn></mrow></semantics></math></inline-formula>, 0.10 and 0.20) were investigated using X-ray diffraction techniques, electrical resistivity and magnetisation measurements. Phase composition analysis of the powder X-ray diffraction data collected on the as-grown boules revealed that the main phase was that of the parent compound, SmB<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula>. Substitution of Sm ions with magnetic Ce ions does not lead to long-range magnetic ordering in the <inline-formula><math display="inline"><semantics><mrow><msub><mi>Sm</mi><mrow><mn>1</mn><mo>−</mo><mi mathvariant="italic">x</mi></mrow></msub><msub><mi>Ce</mi><mi mathvariant="italic">x</mi></msub><msub><mi mathvariant="normal">B</mi><mn>6</mn></msub></mrow></semantics></math></inline-formula> crystals. The substitution with 5% Ce and above suppresses the cross-over from bulk conductivity at high temperatures to surface-only conductivity at low temperatures.
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spelling doaj.art-8378d9fa9c6248f9ac44b98d42d745492023-11-20T14:02:43ZengMDPI AGCrystals2073-43522020-09-0110982710.3390/cryst10090827Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>Monica Ciomaga Hatnean0Talha Ahmad1Marc Walker2Martin R. Lees3Geetha Balakrishnan4Department of Physics, University of Warwick, Coventry CV4 7AL, UKDepartment of Physics, University of Warwick, Coventry CV4 7AL, UKDepartment of Physics, University of Warwick, Coventry CV4 7AL, UKDepartment of Physics, University of Warwick, Coventry CV4 7AL, UKDepartment of Physics, University of Warwick, Coventry CV4 7AL, UKSmB<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula> is a mixed valence topological Kondo insulator. To investigate the effect of substituting Sm with magnetic Ce ions on the physical properties of samarium hexaboride, Ce-substituted SmB<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula> crystals were grown by the floating zone method for the first time as large, good quality single crystal boules. The crystal growth conditions are reported. Structural, magnetic and transport properties of single crystals of Sm<inline-formula><math display="inline"><semantics><msub><mrow/><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub></semantics></math></inline-formula>Ce<inline-formula><math display="inline"><semantics><msub><mrow/><mi>x</mi></msub></semantics></math></inline-formula>B<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula> (<inline-formula><math display="inline"><semantics><mrow><mi>x</mi><mo>=</mo><mn>0.05</mn></mrow></semantics></math></inline-formula>, 0.10 and 0.20) were investigated using X-ray diffraction techniques, electrical resistivity and magnetisation measurements. Phase composition analysis of the powder X-ray diffraction data collected on the as-grown boules revealed that the main phase was that of the parent compound, SmB<inline-formula><math display="inline"><semantics><msub><mrow/><mn>6</mn></msub></semantics></math></inline-formula>. Substitution of Sm ions with magnetic Ce ions does not lead to long-range magnetic ordering in the <inline-formula><math display="inline"><semantics><mrow><msub><mi>Sm</mi><mrow><mn>1</mn><mo>−</mo><mi mathvariant="italic">x</mi></mrow></msub><msub><mi>Ce</mi><mi mathvariant="italic">x</mi></msub><msub><mi mathvariant="normal">B</mi><mn>6</mn></msub></mrow></semantics></math></inline-formula> crystals. The substitution with 5% Ce and above suppresses the cross-over from bulk conductivity at high temperatures to surface-only conductivity at low temperatures.https://www.mdpi.com/2073-4352/10/9/827crystal growthoptical floating zone methodSmB6Sm1-xCexB6topological insulatorkondo insulator
spellingShingle Monica Ciomaga Hatnean
Talha Ahmad
Marc Walker
Martin R. Lees
Geetha Balakrishnan
Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>
Crystals
crystal growth
optical floating zone method
SmB6
Sm1-xCexB6
topological insulator
kondo insulator
title Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>
title_full Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>
title_fullStr Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>
title_full_unstemmed Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>
title_short Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB<sub>6</sub>
title_sort crystal growth by the floating zone method of ce substituted crystals of the topological kondo insulator smb sub 6 sub
topic crystal growth
optical floating zone method
SmB6
Sm1-xCexB6
topological insulator
kondo insulator
url https://www.mdpi.com/2073-4352/10/9/827
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