400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments

This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal...

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Bibliographic Details
Main Authors: Florin Draghici, Gheorghe Brezeanu, Gheorghe Pristavu, Razvan Pascu, Marian Badila, Adriana Pribeanu, Emilian Ceuca
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/19/10/2384
Description
Summary:This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 &#176;C, with sensitivities over 2 mV/&#176;C and excellent linearity (R<sup>2</sup> &gt; 99.99%). The temperature probe also includes dedicated circuitry for signal acquisition and conversion to the 4 mA&#8722;20 mA industrial standard output signal. This read-out circuit can be calibrated for linear response over a tunable temperature detection range. The entire system is designed for full electrical and mechanical compatibility with existing conventional probe casings, allowing for seamless implementation in a factory&#8217;s sensor network. Such sensors are tested alongside standard thermocouples, with matching temperature monitoring results, over several months, in real working conditions (a cement factory), up to 400 &#176;C.
ISSN:1424-8220