400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments

400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments

This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal...

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Bibliographic Details
Main Authors: Florin Draghici, Gheorghe Brezeanu, Gheorghe Pristavu, Razvan Pascu, Marian Badila, Adriana Pribeanu, Emilian Ceuca
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Sensors
Subjects:
high-temperature sensor
read-out circuit
silicon carbide
Schottky diode
harsh environment
industrial temperature monitoring
Online Access:https://www.mdpi.com/1424-8220/19/10/2384

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