High Frequency Multipurpose SiC MOSFET Driver
This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters. The design of the introduced...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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VSB-Technical University of Ostrava
2021-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/4159 |
| _version_ | 1797826978678571008 |
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| author | Jan Strossa Vladislav Damec Martin Sobek Daniel Kouril Jakub Baca |
| author_facet | Jan Strossa Vladislav Damec Martin Sobek Daniel Kouril Jakub Baca |
| author_sort | Jan Strossa |
| collection | DOAJ |
| description | This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters. The design of the introduced driver enables to adjust the output voltage levels easily by choosing the integrated linear voltage stabilizers with suitable output parameters used for Printed Circuit Board (PCB) mounting. The voltage insulation of the proposed driver between the primary control side and the secondary output side is performed by MGJ6D12H24MC muRata Ps DC-DC converter with a declared dv/dt immunity 80 kV/1000 ms at 1.6 kV and by IX3180 IXYS High Speed gate driver optocouplers with a declared 10 kV/1000 ms minimum common mode rejection at 1.5 kV. The voltage insulation of these coupling elements is accompanied by safety gaps on the PCB. These insulation features enable the proposed driver to work on high frequencies as a high-side transistor of H-bridges as same as in other power converter topologies with a high frequency and high voltage stress of the insulation border. The proposed driver also provides the possibility of tripping the signal, when the short circuit of the controlled power transistor occurs. |
| first_indexed | 2024-04-09T12:40:53Z |
| format | Article |
| id | doaj.art-83aed04f4c974c3bb030682398dc5804 |
| institution | Directory Open Access Journal |
| issn | 1336-1376 1804-3119 |
| language | English |
| last_indexed | 2024-04-09T12:40:53Z |
| publishDate | 2021-01-01 |
| publisher | VSB-Technical University of Ostrava |
| record_format | Article |
| series | Advances in Electrical and Electronic Engineering |
| spelling | doaj.art-83aed04f4c974c3bb030682398dc58042023-05-14T20:50:13ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192021-01-0119320321110.15598/aeee.v19i3.41591122High Frequency Multipurpose SiC MOSFET DriverJan Strossa0Vladislav Damec1Martin Sobek2Daniel Kouril3Jakub Baca4Department of Electronics, Faculty of Electrical Engineering and Computer Science, VSB-Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava, Czech RepublicDepartment of Electronics, Faculty of Electrical Engineering and Computer Science, VSB-Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava, Czech RepublicDepartment of Electronics, Faculty of Electrical Engineering and Computer Science, VSB-Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava, Czech RepublicDepartment of Electronics, Faculty of Electrical Engineering and Computer Science, VSB-Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava, Czech RepublicDepartment of Electronics, Faculty of Electrical Engineering and Computer Science, VSB-Technical University of Ostrava, 17. listopadu 2172/15, 708 00 Ostrava, Czech RepublicThis article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters. The design of the introduced driver enables to adjust the output voltage levels easily by choosing the integrated linear voltage stabilizers with suitable output parameters used for Printed Circuit Board (PCB) mounting. The voltage insulation of the proposed driver between the primary control side and the secondary output side is performed by MGJ6D12H24MC muRata Ps DC-DC converter with a declared dv/dt immunity 80 kV/1000 ms at 1.6 kV and by IX3180 IXYS High Speed gate driver optocouplers with a declared 10 kV/1000 ms minimum common mode rejection at 1.5 kV. The voltage insulation of these coupling elements is accompanied by safety gaps on the PCB. These insulation features enable the proposed driver to work on high frequencies as a high-side transistor of H-bridges as same as in other power converter topologies with a high frequency and high voltage stress of the insulation border. The proposed driver also provides the possibility of tripping the signal, when the short circuit of the controlled power transistor occurs.http://advances.utc.sk/index.php/AEEE/article/view/4159driverhigh switching frequencymosfetmultipurpose driverovershootsic. |
| spellingShingle | Jan Strossa Vladislav Damec Martin Sobek Daniel Kouril Jakub Baca High Frequency Multipurpose SiC MOSFET Driver Advances in Electrical and Electronic Engineering driver high switching frequency mosfet multipurpose driver overshoot sic. |
| title | High Frequency Multipurpose SiC MOSFET Driver |
| title_full | High Frequency Multipurpose SiC MOSFET Driver |
| title_fullStr | High Frequency Multipurpose SiC MOSFET Driver |
| title_full_unstemmed | High Frequency Multipurpose SiC MOSFET Driver |
| title_short | High Frequency Multipurpose SiC MOSFET Driver |
| title_sort | high frequency multipurpose sic mosfet driver |
| topic | driver high switching frequency mosfet multipurpose driver overshoot sic. |
| url | http://advances.utc.sk/index.php/AEEE/article/view/4159 |
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