Raman Characterization of Carrier Concentrations of Al-implanted 4H-SiC with Low Carrier Concentration by Photo-Generated Carrier Effect
In this work, 4H SiC samples with a multilayer structure (shallow implanted layer in a lowly doped n-type epitaxial layer grown on a highly doped thick substrate) were investigated by Raman scattering. First, Raman depth profiling was performed to identify characteristic peaks for the different laye...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-08-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/9/8/428 |