Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse
Abstract Solar‐blind ultraviolet (UV) photodetectors based on p‐organic/n‐Ga2O3 hybrid heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar‐blind photodetector based on p‐type poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothi...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2024-02-01
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| Series: | InfoMat |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/inf2.12503 |
| _version_ | 1797295284527562752 |
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| author | Yifei Wang Zhenhua Lin Jingli Ma Yongyi Wu Haidong Yuan Dongsheng Cui Mengyang Kang Xing Guo Jie Su Jinshui Miao Zhifeng Shi Tao Li Jincheng Zhang Yue Hao Jingjing Chang |
| author_facet | Yifei Wang Zhenhua Lin Jingli Ma Yongyi Wu Haidong Yuan Dongsheng Cui Mengyang Kang Xing Guo Jie Su Jinshui Miao Zhifeng Shi Tao Li Jincheng Zhang Yue Hao Jingjing Chang |
| author_sort | Yifei Wang |
| collection | DOAJ |
| description | Abstract Solar‐blind ultraviolet (UV) photodetectors based on p‐organic/n‐Ga2O3 hybrid heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar‐blind photodetector based on p‐type poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)] (PCDTBT)/n‐type amorphous Ga2O3 (a‐Ga2O3) is fabricated and investigated, which can work in the phototransistor mode coupling with self‐powered mode. With the introduction of PCDTBT, the dark current of such the a‐Ga2O3‐based photodetector is decreased to 0.48 pA. Meanwhile, the photoresponse parameters of the a‐Ga2O3‐based photodetector in the phototransistor mode to solar‐blind UV light are further increased, that is, responsivity (R), photo‐detectivity (D*), and external quantum efficiency (EQE) enhanced to 187 A W–1, 1.3 × 1016 Jones and 9.1 × 104 % under the weak light intensity of 11 μW cm–2, respectively. Thanks to the formation of the built‐in field in the p‐PCDTBT/n‐Ga2O3 type‐II heterojunction, the PCDTBT/Ga2O3 multifunctional photodetector shows self‐powered behavior. The responsivity of p‐PCDTBT/n‐Ga2O3 multifunctional photodetector is 57.5 mA W–1 at zero bias. Such multifunctional p‐n hybrid heterojunction‐based photodetectors set the stage for realizing high‐performance amorphous Ga2O3 heterojunction‐based photodetectors. |
| first_indexed | 2024-03-07T21:44:33Z |
| format | Article |
| id | doaj.art-83d7e663028b4874a2d92d82024db95c |
| institution | Directory Open Access Journal |
| issn | 2567-3165 |
| language | English |
| last_indexed | 2024-03-07T21:44:33Z |
| publishDate | 2024-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | InfoMat |
| spelling | doaj.art-83d7e663028b4874a2d92d82024db95c2024-02-26T00:48:22ZengWileyInfoMat2567-31652024-02-0162n/an/a10.1002/inf2.12503Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponseYifei Wang0Zhenhua Lin1Jingli Ma2Yongyi Wu3Haidong Yuan4Dongsheng Cui5Mengyang Kang6Xing Guo7Jie Su8Jinshui Miao9Zhifeng Shi10Tao Li11Jincheng Zhang12Yue Hao13Jingjing Chang14State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaSchool of Physics and Microelectronics, Key Laboratory of Material Physics, Ministry of Education Zhengzhou University Zhengzhou the People's Republic of ChinaCenter for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering Xi'an Jiaotong University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaAdvanced Interdisciplinary Research Center for Flexible Electronics Xidian University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai the People's Republic of ChinaSchool of Physics and Microelectronics, Key Laboratory of Material Physics, Ministry of Education Zhengzhou University Zhengzhou the People's Republic of ChinaCenter for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering Xi'an Jiaotong University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics Xidian University Xi'an the People's Republic of ChinaAbstract Solar‐blind ultraviolet (UV) photodetectors based on p‐organic/n‐Ga2O3 hybrid heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar‐blind photodetector based on p‐type poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)] (PCDTBT)/n‐type amorphous Ga2O3 (a‐Ga2O3) is fabricated and investigated, which can work in the phototransistor mode coupling with self‐powered mode. With the introduction of PCDTBT, the dark current of such the a‐Ga2O3‐based photodetector is decreased to 0.48 pA. Meanwhile, the photoresponse parameters of the a‐Ga2O3‐based photodetector in the phototransistor mode to solar‐blind UV light are further increased, that is, responsivity (R), photo‐detectivity (D*), and external quantum efficiency (EQE) enhanced to 187 A W–1, 1.3 × 1016 Jones and 9.1 × 104 % under the weak light intensity of 11 μW cm–2, respectively. Thanks to the formation of the built‐in field in the p‐PCDTBT/n‐Ga2O3 type‐II heterojunction, the PCDTBT/Ga2O3 multifunctional photodetector shows self‐powered behavior. The responsivity of p‐PCDTBT/n‐Ga2O3 multifunctional photodetector is 57.5 mA W–1 at zero bias. Such multifunctional p‐n hybrid heterojunction‐based photodetectors set the stage for realizing high‐performance amorphous Ga2O3 heterojunction‐based photodetectors.https://doi.org/10.1002/inf2.12503amorphous Ga2O3heterojunctionmultifunctionalPCDTBTsolar‐blind photodetectors |
| spellingShingle | Yifei Wang Zhenhua Lin Jingli Ma Yongyi Wu Haidong Yuan Dongsheng Cui Mengyang Kang Xing Guo Jie Su Jinshui Miao Zhifeng Shi Tao Li Jincheng Zhang Yue Hao Jingjing Chang Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse InfoMat amorphous Ga2O3 heterojunction multifunctional PCDTBT solar‐blind photodetectors |
| title | Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse |
| title_full | Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse |
| title_fullStr | Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse |
| title_full_unstemmed | Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse |
| title_short | Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse |
| title_sort | multifunctional solar blind ultraviolet photodetectors based on p pcdtbt n ga2o3 heterojunction with high photoresponse |
| topic | amorphous Ga2O3 heterojunction multifunctional PCDTBT solar‐blind photodetectors |
| url | https://doi.org/10.1002/inf2.12503 |
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