Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy

Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy

Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques. The nucleation of Ge proceeds by forming (111) ori...

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Bibliographic Details
Main Authors: Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Crystals
Subjects:
correlation length
bivariate polar histograms
twinning
Online Access:https://www.mdpi.com/2073-4352/13/11/1557

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