Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films
In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and op...
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MDPI AG
2021-10-01
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| Online Access: | https://www.mdpi.com/2072-666X/12/10/1240 |
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| author | Marwa Fathy Sara Gad Badawi Anis Abd El-Hady B. Kashyout |
| author_facet | Marwa Fathy Sara Gad Badawi Anis Abd El-Hady B. Kashyout |
| author_sort | Marwa Fathy |
| collection | DOAJ |
| description | In this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and optical properties are carried out with different techniques to investigate the main featured properties of GaN bulk alloys and their thin films. Field emission scanning electron microscopy (FESEM) delivered images in bulk structures that show micro rods with an average diameter of 0.98 µm, while their thin films show regular microspheres with diameter ranging from 0.13 µm to 0.22 µm. X-ray diffraction (XRD) of the bulk crystals reveals a combination of 20% hexagonal and 80% cubic structure, and in thin films, it shows the orientation of the hexagonal phase. For HRTEM, these microspheres are composed of nanoparticles of GaN with diameter of 8–10 nm. For the optical behavior, a band gap of about from 2.33 to 3.1 eV is observed in both cases as alloy and thin film, respectively. This article highlights the fabrication of the major cubic structure of GaN bulk alloy with its thin films of high electron lifetime. |
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| id | doaj.art-8418875715f14a9eabc81a79a57cb6e5 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T06:22:08Z |
| publishDate | 2021-10-01 |
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| series | Micromachines |
| spelling | doaj.art-8418875715f14a9eabc81a79a57cb6e52023-11-22T19:12:07ZengMDPI AGMicromachines2072-666X2021-10-011210124010.3390/mi12101240Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin FilmsMarwa Fathy0Sara Gad1Badawi Anis2Abd El-Hady B. Kashyout3Electronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), Alexandria 21934, EgyptElectronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), Alexandria 21934, EgyptSpectroscopy Department, Physics Division, National Research Centre, 33 El Bohouth St., Dokki, Giza 12622, EgyptElectronic Materials Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), Alexandria 21934, EgyptIn this study, we investigate a novel simple methodology to synthesize gallium nitride nanoparticles (GaN) that could be used as an active layer in light-emitting diode (LED) devices by combining the crystal growth technique with thermal vacuum evaporation. The characterizations of structural and optical properties are carried out with different techniques to investigate the main featured properties of GaN bulk alloys and their thin films. Field emission scanning electron microscopy (FESEM) delivered images in bulk structures that show micro rods with an average diameter of 0.98 µm, while their thin films show regular microspheres with diameter ranging from 0.13 µm to 0.22 µm. X-ray diffraction (XRD) of the bulk crystals reveals a combination of 20% hexagonal and 80% cubic structure, and in thin films, it shows the orientation of the hexagonal phase. For HRTEM, these microspheres are composed of nanoparticles of GaN with diameter of 8–10 nm. For the optical behavior, a band gap of about from 2.33 to 3.1 eV is observed in both cases as alloy and thin film, respectively. This article highlights the fabrication of the major cubic structure of GaN bulk alloy with its thin films of high electron lifetime.https://www.mdpi.com/2072-666X/12/10/1240GaNcrystal growthcubic and hexagonal structureblue and yellow luminescenceelectron lifetime |
| spellingShingle | Marwa Fathy Sara Gad Badawi Anis Abd El-Hady B. Kashyout Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films Micromachines GaN crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime |
| title | Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films |
| title_full | Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films |
| title_fullStr | Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films |
| title_full_unstemmed | Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films |
| title_short | Crystal Growth of Cubic and Hexagonal GaN Bulk Alloys and Their Thermal-Vacuum-Evaporated Nano-Thin Films |
| title_sort | crystal growth of cubic and hexagonal gan bulk alloys and their thermal vacuum evaporated nano thin films |
| topic | GaN crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime |
| url | https://www.mdpi.com/2072-666X/12/10/1240 |
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