Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe
The authors have investigated electronic properties of n-TiO2:Mn/p-CdTe anisotype heterojunctions, produced by the method of electron-beam evaporation of TiO2:Mn film on single-crystal CdTe substrates in vacuum. The dominant mechanism of charge transport in the forward and reverse bias has been esta...
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Format: | Article |
Language: | English |
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Politehperiodika
2013-02-01
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Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
Subjects: | |
Online Access: | http://www.tkea.com.ua/tkea/2013/1_2013/pdf/08.zip |
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author | Mostovyi A. I. Brus V. V. Maryanchuk P. D. Ulyanitskii K. S. |
author_facet | Mostovyi A. I. Brus V. V. Maryanchuk P. D. Ulyanitskii K. S. |
author_sort | Mostovyi A. I. |
collection | DOAJ |
description | The authors have investigated electronic properties of n-TiO2:Mn/p-CdTe anisotype heterojunctions, produced by the method of electron-beam evaporation of TiO2:Mn film on single-crystal CdTe substrates in vacuum. The dominant mechanism of charge transport in the forward and reverse bias has been established. |
first_indexed | 2024-12-23T11:33:20Z |
format | Article |
id | doaj.art-845f59a6bd3d40358e6aec0c6b2b58ef |
institution | Directory Open Access Journal |
issn | 2225-5818 |
language | English |
last_indexed | 2024-12-23T11:33:20Z |
publishDate | 2013-02-01 |
publisher | Politehperiodika |
record_format | Article |
series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
spelling | doaj.art-845f59a6bd3d40358e6aec0c6b2b58ef2022-12-21T17:48:43ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182013-02-0114548Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTeMostovyi A. I.Brus V. V.Maryanchuk P. D.Ulyanitskii K. S.The authors have investigated electronic properties of n-TiO2:Mn/p-CdTe anisotype heterojunctions, produced by the method of electron-beam evaporation of TiO2:Mn film on single-crystal CdTe substrates in vacuum. The dominant mechanism of charge transport in the forward and reverse bias has been established.http://www.tkea.com.ua/tkea/2013/1_2013/pdf/08.zipheterojunction thin film dopingTiO2CdTe |
spellingShingle | Mostovyi A. I. Brus V. V. Maryanchuk P. D. Ulyanitskii K. S. Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe Tekhnologiya i Konstruirovanie v Elektronnoi Apparature heterojunction thin film doping TiO2 CdTe |
title | Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe |
title_full | Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe |
title_fullStr | Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe |
title_full_unstemmed | Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe |
title_short | Electrical properties anisotype heterojunctions n-TiO2:Mn/p-CdTe |
title_sort | electrical properties anisotype heterojunctions n tio2 mn p cdte |
topic | heterojunction thin film doping TiO2 CdTe |
url | http://www.tkea.com.ua/tkea/2013/1_2013/pdf/08.zip |
work_keys_str_mv | AT mostovyiai electricalpropertiesanisotypeheterojunctionsntio2mnpcdte AT brusvv electricalpropertiesanisotypeheterojunctionsntio2mnpcdte AT maryanchukpd electricalpropertiesanisotypeheterojunctionsntio2mnpcdte AT ulyanitskiiks electricalpropertiesanisotypeheterojunctionsntio2mnpcdte |