Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots
Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease o...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-08-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-07483-3 |
| _version_ | 1818423176036614144 |
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| author | Tzu-Neng Lin Svette Reina Merden Santiago Chi-Tsu Yuan Kuo-Pin Chiu Ji-Lin Shen Ting-Chun Wang Hao-Chung Kuo Ching-Hsueh Chiu Yung-Chi Yao Ya-Ju Lee |
| author_facet | Tzu-Neng Lin Svette Reina Merden Santiago Chi-Tsu Yuan Kuo-Pin Chiu Ji-Lin Shen Ting-Chun Wang Hao-Chung Kuo Ching-Hsueh Chiu Yung-Chi Yao Ya-Ju Lee |
| author_sort | Tzu-Neng Lin |
| collection | DOAJ |
| description | Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer. |
| first_indexed | 2024-12-14T13:37:59Z |
| format | Article |
| id | doaj.art-84637e9ed34047bf8788a2fa47890714 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-14T13:37:59Z |
| publishDate | 2017-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-84637e9ed34047bf8788a2fa478907142022-12-21T22:59:31ZengNature PortfolioScientific Reports2045-23222017-08-01711910.1038/s41598-017-07483-3Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum DotsTzu-Neng Lin0Svette Reina Merden Santiago1Chi-Tsu Yuan2Kuo-Pin Chiu3Ji-Lin Shen4Ting-Chun Wang5Hao-Chung Kuo6Ching-Hsueh Chiu7Yung-Chi Yao8Ya-Ju Lee9Department of Physics and Center for Nanotechnology, Chung Yuan Christian UniversityDepartment of Physics and Center for Nanotechnology, Chung Yuan Christian UniversityDepartment of Physics and Center for Nanotechnology, Chung Yuan Christian UniversityDepartment of Physics and Center for Nanotechnology, Chung Yuan Christian UniversityDepartment of Physics and Center for Nanotechnology, Chung Yuan Christian UniversityDepartment of Photonics, Research Center Energy Technology and Strategy, National Cheng Kung UniversityDepartment of Photonics, National Chiao Tung UniversityDepartment of Electronic Engineering, Chung Yuan Christian UniversityInstitute of Electro-Optical Science and Technology, National Taiwan Normal UniversityInstitute of Electro-Optical Science and Technology, National Taiwan Normal UniversityAbstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancement of electroluminescence and a decrease of series resistance of LEDs were observed after incorporation of GQDs on the LED surface. As the GQD concentration is increased, the emitted light (series resistance) in the LED increases (decreases) accordingly. The light output power achieved a maximum increase as high as 71% after introducing GQDs with the concentration of 0.9 mg/ml. The improved performance of LEDs after the introduction of GQDs is explained by the photon recycling through the light extraction from the waveguide mode and the carrier transfer from GQDs to the active layer.https://doi.org/10.1038/s41598-017-07483-3 |
| spellingShingle | Tzu-Neng Lin Svette Reina Merden Santiago Chi-Tsu Yuan Kuo-Pin Chiu Ji-Lin Shen Ting-Chun Wang Hao-Chung Kuo Ching-Hsueh Chiu Yung-Chi Yao Ya-Ju Lee Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots Scientific Reports |
| title | Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots |
| title_full | Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots |
| title_fullStr | Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots |
| title_full_unstemmed | Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots |
| title_short | Enhanced Performance of GaN-based Ultraviolet Light Emitting Diodes by Photon Recycling Using Graphene Quantum Dots |
| title_sort | enhanced performance of gan based ultraviolet light emitting diodes by photon recycling using graphene quantum dots |
| url | https://doi.org/10.1038/s41598-017-07483-3 |
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