Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study

Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study

Doping is an important method to modulate the physical and chemical properties of two-dimensional materials. By substitutional doping, different group IV–VI atoms are doped in GeSe monolayers to compose the doped models, of which the effects are investigated using first-principles calculations. The...

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Bibliographic Details
Main Authors: Hao Ni, Yonghong Hu, Guopeng Zhou, Caixia Mao, Zhiyuan Chen, Qingyong He, Libing Qian
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Crystals
Subjects:
GeSe monolayer
doping
first-principles calculation
electric property
Online Access:https://www.mdpi.com/2073-4352/13/2/284

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