Insight into physics-based RRAM models – review
This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that exist in the models is performed. Two different...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-05-01
|
| Series: | The Journal of Engineering |
| Subjects: | |
| Online Access: | https://digital-library.theiet.org/content/journals/10.1049/joe.2018.5234 |
| _version_ | 1818560574861082624 |
|---|---|
| author | Arya Lekshmi Jagath Chee Hock Leong T. Nandha Kumar HaiderA.F. Almurib |
| author_facet | Arya Lekshmi Jagath Chee Hock Leong T. Nandha Kumar HaiderA.F. Almurib |
| author_sort | Arya Lekshmi Jagath |
| collection | DOAJ |
| description | This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that exist in the models is performed. Two different physical mechanisms that drive resistive switching; drift diffusion and redox which are widely adopted in models are studied. As for the current conduction mechanisms adopted in the models, Schottky and generalised hopping mechanisms are investigated. It is shown that resistive switching is strongly influenced by the electric field and temperature, while the current conduction is weakly dependent on the temperature. The resistive switching and current conduction mechanisms in RRAMs are highly dependent on the geometry of the conductive filament (CF). 2D and 3D models which incorporate the rupture/formation of the CF together with the variation of the filament radius present accurate resistive switching behaviour. |
| first_indexed | 2024-12-14T00:40:03Z |
| format | Article |
| id | doaj.art-848f6f444b8e48c68d40e03e91806881 |
| institution | Directory Open Access Journal |
| issn | 2051-3305 |
| language | English |
| last_indexed | 2024-12-14T00:40:03Z |
| publishDate | 2019-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | The Journal of Engineering |
| spelling | doaj.art-848f6f444b8e48c68d40e03e918068812022-12-21T23:24:25ZengWileyThe Journal of Engineering2051-33052019-05-0110.1049/joe.2018.5234JOE.2018.5234Insight into physics-based RRAM models – reviewArya Lekshmi Jagath0Chee Hock Leong1T. Nandha Kumar2HaiderA.F. Almurib3The University of Nottingham Malaysia CampusThe University of Nottingham Malaysia CampusThe University of Nottingham Malaysia CampusThe University of Nottingham Malaysia CampusThis article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that exist in the models is performed. Two different physical mechanisms that drive resistive switching; drift diffusion and redox which are widely adopted in models are studied. As for the current conduction mechanisms adopted in the models, Schottky and generalised hopping mechanisms are investigated. It is shown that resistive switching is strongly influenced by the electric field and temperature, while the current conduction is weakly dependent on the temperature. The resistive switching and current conduction mechanisms in RRAMs are highly dependent on the geometry of the conductive filament (CF). 2D and 3D models which incorporate the rupture/formation of the CF together with the variation of the filament radius present accurate resistive switching behaviour.https://digital-library.theiet.org/content/journals/10.1049/joe.2018.5234resistive RAMelectrical resistivityelectrical conductivity transitionsintegrated circuit modellingoxidationreduction (chemical)physics-based RRAM modelscompact modelsoxide-based RRAM deviceselectrical parametersthermal parametersdrift diffusionredoxelectric fieldconductive filamentcurrent conduction mechanismsresistive switchingfilament radiusgeneralised hopping mechanismsSchottky hopping mechanismsconductive filament geometry3D models2D modelsresistive switching behaviour |
| spellingShingle | Arya Lekshmi Jagath Chee Hock Leong T. Nandha Kumar HaiderA.F. Almurib Insight into physics-based RRAM models – review The Journal of Engineering resistive RAM electrical resistivity electrical conductivity transitions integrated circuit modelling oxidation reduction (chemical) physics-based RRAM models compact models oxide-based RRAM devices electrical parameters thermal parameters drift diffusion redox electric field conductive filament current conduction mechanisms resistive switching filament radius generalised hopping mechanisms Schottky hopping mechanisms conductive filament geometry 3D models 2D models resistive switching behaviour |
| title | Insight into physics-based RRAM models – review |
| title_full | Insight into physics-based RRAM models – review |
| title_fullStr | Insight into physics-based RRAM models – review |
| title_full_unstemmed | Insight into physics-based RRAM models – review |
| title_short | Insight into physics-based RRAM models – review |
| title_sort | insight into physics based rram models review |
| topic | resistive RAM electrical resistivity electrical conductivity transitions integrated circuit modelling oxidation reduction (chemical) physics-based RRAM models compact models oxide-based RRAM devices electrical parameters thermal parameters drift diffusion redox electric field conductive filament current conduction mechanisms resistive switching filament radius generalised hopping mechanisms Schottky hopping mechanisms conductive filament geometry 3D models 2D models resistive switching behaviour |
| url | https://digital-library.theiet.org/content/journals/10.1049/joe.2018.5234 |
| work_keys_str_mv | AT aryalekshmijagath insightintophysicsbasedrrammodelsreview AT cheehockleong insightintophysicsbasedrrammodelsreview AT tnandhakumar insightintophysicsbasedrrammodelsreview AT haiderafalmurib insightintophysicsbasedrrammodelsreview |