Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs
Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of InGaAs/InAlAs high electron mobility transisto...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Shahid Rajaee Teacher Training University
2019-06-01
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| Series: | Journal of Electrical and Computer Engineering Innovations |
| Subjects: | |
| Online Access: | https://jecei.sru.ac.ir/article_1215_aaf14b9aea7019de2d8fa3f68f395a6d.pdf |