An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation

An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation

High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of th...

Full description

Bibliographic Details
Main Authors: Y. Pei, Amgad A. Al-Saman, Chengong Yin, Eugeny A. Ryndin, Fujiang Lin
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gallium nitride
high electron mobility transistors
frequency dispersion
small-signal model
Online Access:https://ieeexplore.ieee.org/document/9596572/
Description
Summary:High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of the transistor output resistance. Moreover, a new intrinsic small-signal equivalent circuit has been proposed to consider the output resistance dispersion. Comparison with measured s- parameters have validated the proposed approach.
ISSN:2168-6734

Similar Items