An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation
High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of th...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9596572/ |
| _version_ | 1818285091724460032 |
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| author | Y. Pei Amgad A. Al-Saman Chengong Yin Eugeny A. Ryndin Fujiang Lin |
| author_facet | Y. Pei Amgad A. Al-Saman Chengong Yin Eugeny A. Ryndin Fujiang Lin |
| author_sort | Y. Pei |
| collection | DOAJ |
| description | High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of the transistor output resistance. Moreover, a new intrinsic small-signal equivalent circuit has been proposed to consider the output resistance dispersion. Comparison with measured s- parameters have validated the proposed approach. |
| first_indexed | 2024-12-13T01:03:11Z |
| format | Article |
| id | doaj.art-84d1037de96c4715b8aabe82a8cd4c13 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T01:03:11Z |
| publishDate | 2021-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-84d1037de96c4715b8aabe82a8cd4c132022-12-22T00:04:38ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-0191060106510.1109/JEDS.2021.31243279596572An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance EquationY. Pei0Amgad A. Al-Saman1https://orcid.org/0000-0002-8323-1714Chengong Yin2Eugeny A. Ryndin3https://orcid.org/0000-0001-6844-7106Fujiang Lin4https://orcid.org/0000-0001-9238-6737Device Technology Department, Dynax Semiconductor Inc., Suzhou, ChinaDevice Technology Department, Dynax Semiconductor Inc., Suzhou, ChinaDevice Technology Department, Dynax Semiconductor Inc., Suzhou, ChinaDepartment of Micro- and Nanoelectronics, Saint Petersburg Electrotechnical University “LETI”, Saint Petersburg, RussiaSchool of Microelectronics, University of Science and Technology of China, Hefei, ChinaHigh-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main reason for the high-frequency dispersion of the transistor output resistance. Moreover, a new intrinsic small-signal equivalent circuit has been proposed to consider the output resistance dispersion. Comparison with measured s- parameters have validated the proposed approach.https://ieeexplore.ieee.org/document/9596572/Gallium nitridehigh electron mobility transistorsfrequency dispersionsmall-signal model |
| spellingShingle | Y. Pei Amgad A. Al-Saman Chengong Yin Eugeny A. Ryndin Fujiang Lin An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation IEEE Journal of the Electron Devices Society Gallium nitride high electron mobility transistors frequency dispersion small-signal model |
| title | An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation |
| title_full | An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation |
| title_fullStr | An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation |
| title_full_unstemmed | An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation |
| title_short | An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation |
| title_sort | intrinsic small signal equivalent circuit model for algan gan hemt considering the momentum balance equation |
| topic | Gallium nitride high electron mobility transistors frequency dispersion small-signal model |
| url | https://ieeexplore.ieee.org/document/9596572/ |
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