The MMIC design of GaAs bi-phase voltage variable attenuator
A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented. Balanced structure that adopt in this circuit provides less input output return loss. A cascade of T-attenuator and Pi-attenuator...
| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
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National Computer System Engineering Research Institute of China
2019-04-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000100192 |
| _version_ | 1818602352638164992 |
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| author | Yuan Yifei Zhang Bo |
| author_facet | Yuan Yifei Zhang Bo |
| author_sort | Yuan Yifei |
| collection | DOAJ |
| description | A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented. Balanced structure that adopt in this circuit provides less input output return loss. A cascade of T-attenuator and Pi-attenuator topologies are adopt in attenuator part. Parasitic reduce and linearity enhancement are achieved by using stacked double-gate switch transistor structure in shunt arms of T-attenuator and Pi-attenuator topologies. Simulated results show that in the range of 13-16 GHz, the input output return loss is less than -14 dB, the insertion loss is 12.5 dB, and the dynamic range is more than 20 dB, the input 1-dB power compression point(P1dB) is over 30 dBm while the chip area is 1.8 mm×1.2 mm. |
| first_indexed | 2024-12-16T13:05:55Z |
| format | Article |
| id | doaj.art-85028830c1544137b16b52d6e2f53ffe |
| institution | Directory Open Access Journal |
| issn | 0258-7998 |
| language | zho |
| last_indexed | 2024-12-16T13:05:55Z |
| publishDate | 2019-04-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj.art-85028830c1544137b16b52d6e2f53ffe2022-12-21T22:30:45ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982019-04-01454454710.16157/j.issn.0258-7998.1824473000100192The MMIC design of GaAs bi-phase voltage variable attenuatorYuan Yifei0Zhang Bo1School of Electronic Engineering，Xi′an University of Posts and Telecommunications，Xi′an 710121，ChinaSchool of Electronic Engineering，Xi′an University of Posts and Telecommunications，Xi′an 710121，ChinaA 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented. Balanced structure that adopt in this circuit provides less input output return loss. A cascade of T-attenuator and Pi-attenuator topologies are adopt in attenuator part. Parasitic reduce and linearity enhancement are achieved by using stacked double-gate switch transistor structure in shunt arms of T-attenuator and Pi-attenuator topologies. Simulated results show that in the range of 13-16 GHz, the input output return loss is less than -14 dB, the insertion loss is 12.5 dB, and the dynamic range is more than 20 dB, the input 1-dB power compression point(P1dB) is over 30 dBm while the chip area is 1.8 mm×1.2 mm.http://www.chinaaet.com/article/3000100192voltage variable attenuatorlarge attenuation rangegallium arsenidepseudomorphic high electron mobility transistors |
| spellingShingle | Yuan Yifei Zhang Bo The MMIC design of GaAs bi-phase voltage variable attenuator Dianzi Jishu Yingyong voltage variable attenuator large attenuation range gallium arsenide pseudomorphic high electron mobility transistors |
| title | The MMIC design of GaAs bi-phase voltage variable attenuator |
| title_full | The MMIC design of GaAs bi-phase voltage variable attenuator |
| title_fullStr | The MMIC design of GaAs bi-phase voltage variable attenuator |
| title_full_unstemmed | The MMIC design of GaAs bi-phase voltage variable attenuator |
| title_short | The MMIC design of GaAs bi-phase voltage variable attenuator |
| title_sort | mmic design of gaas bi phase voltage variable attenuator |
| topic | voltage variable attenuator large attenuation range gallium arsenide pseudomorphic high electron mobility transistors |
| url | http://www.chinaaet.com/article/3000100192 |
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