Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems
Conversion of temperature gradients to charge currents in quantum dot systems enables probing various concepts from highly efficient energy harvesting and fundamental thermodynamics to spectroscopic possibilities complementary to conventional bias device characterization. In this work, we present a...
Main Authors: | , , |
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Format: | Article |
Language: | English |
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IOP Publishing
2021-01-01
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Series: | New Journal of Physics |
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Online Access: | https://doi.org/10.1088/1367-2630/ac434c |
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author | Sven Dorsch Sofia Fahlvik Adam Burke |
author_facet | Sven Dorsch Sofia Fahlvik Adam Burke |
author_sort | Sven Dorsch |
collection | DOAJ |
description | Conversion of temperature gradients to charge currents in quantum dot systems enables probing various concepts from highly efficient energy harvesting and fundamental thermodynamics to spectroscopic possibilities complementary to conventional bias device characterization. In this work, we present a proof-of-concept study of a device architecture where bottom-gates are capacitively coupled to an InAs nanowire and double function as local joule heaters. The device design combines the ability to heat locally at different locations on the device with the electrostatic definition of various quantum dot and barrier configurations. We demonstrate the versatility of this combined gating- and heating approach by studying, as a function of the heater location and bias, the Seebeck effect across the barrier-free nanowire, fit thermocurrents through quantum dots for thermometry and detect the phonon energy using a serial double quantum dot. The results indicate symmetric heating effects when the device is heated with different gates and we present detection schemes for the electronic and phononic heat transfer contribution across the nanowire. Based on this proof-of-principle work, we propose a variety of future experiments. |
first_indexed | 2024-03-12T16:06:39Z |
format | Article |
id | doaj.art-851f69fe1a754ca49c1ea730aac37438 |
institution | Directory Open Access Journal |
issn | 1367-2630 |
language | English |
last_indexed | 2024-03-12T16:06:39Z |
publishDate | 2021-01-01 |
publisher | IOP Publishing |
record_format | Article |
series | New Journal of Physics |
spelling | doaj.art-851f69fe1a754ca49c1ea730aac374382023-08-09T14:18:50ZengIOP PublishingNew Journal of Physics1367-26302021-01-01231212500710.1088/1367-2630/ac434cCharacterization of electrostatically defined bottom-heated InAs nanowire quantum dot systemsSven Dorsch0https://orcid.org/0000-0002-4314-945XSofia Fahlvik1Adam Burke2https://orcid.org/0000-0001-9345-2812Solid State Physics and NanoLund, Lund University , SE-22100 Lund, SwedenSolid State Physics and NanoLund, Lund University , SE-22100 Lund, SwedenSolid State Physics and NanoLund, Lund University , SE-22100 Lund, SwedenConversion of temperature gradients to charge currents in quantum dot systems enables probing various concepts from highly efficient energy harvesting and fundamental thermodynamics to spectroscopic possibilities complementary to conventional bias device characterization. In this work, we present a proof-of-concept study of a device architecture where bottom-gates are capacitively coupled to an InAs nanowire and double function as local joule heaters. The device design combines the ability to heat locally at different locations on the device with the electrostatic definition of various quantum dot and barrier configurations. We demonstrate the versatility of this combined gating- and heating approach by studying, as a function of the heater location and bias, the Seebeck effect across the barrier-free nanowire, fit thermocurrents through quantum dots for thermometry and detect the phonon energy using a serial double quantum dot. The results indicate symmetric heating effects when the device is heated with different gates and we present detection schemes for the electronic and phononic heat transfer contribution across the nanowire. Based on this proof-of-principle work, we propose a variety of future experiments.https://doi.org/10.1088/1367-2630/ac434cthermoelectric effectphonon-assisted transportnanowirequantum dot |
spellingShingle | Sven Dorsch Sofia Fahlvik Adam Burke Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems New Journal of Physics thermoelectric effect phonon-assisted transport nanowire quantum dot |
title | Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems |
title_full | Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems |
title_fullStr | Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems |
title_full_unstemmed | Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems |
title_short | Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems |
title_sort | characterization of electrostatically defined bottom heated inas nanowire quantum dot systems |
topic | thermoelectric effect phonon-assisted transport nanowire quantum dot |
url | https://doi.org/10.1088/1367-2630/ac434c |
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