Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems

Conversion of temperature gradients to charge currents in quantum dot systems enables probing various concepts from highly efficient energy harvesting and fundamental thermodynamics to spectroscopic possibilities complementary to conventional bias device characterization. In this work, we present a...

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Main Authors: Sven Dorsch, Sofia Fahlvik, Adam Burke
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/ac434c
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author Sven Dorsch
Sofia Fahlvik
Adam Burke
author_facet Sven Dorsch
Sofia Fahlvik
Adam Burke
author_sort Sven Dorsch
collection DOAJ
description Conversion of temperature gradients to charge currents in quantum dot systems enables probing various concepts from highly efficient energy harvesting and fundamental thermodynamics to spectroscopic possibilities complementary to conventional bias device characterization. In this work, we present a proof-of-concept study of a device architecture where bottom-gates are capacitively coupled to an InAs nanowire and double function as local joule heaters. The device design combines the ability to heat locally at different locations on the device with the electrostatic definition of various quantum dot and barrier configurations. We demonstrate the versatility of this combined gating- and heating approach by studying, as a function of the heater location and bias, the Seebeck effect across the barrier-free nanowire, fit thermocurrents through quantum dots for thermometry and detect the phonon energy using a serial double quantum dot. The results indicate symmetric heating effects when the device is heated with different gates and we present detection schemes for the electronic and phononic heat transfer contribution across the nanowire. Based on this proof-of-principle work, we propose a variety of future experiments.
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spelling doaj.art-851f69fe1a754ca49c1ea730aac374382023-08-09T14:18:50ZengIOP PublishingNew Journal of Physics1367-26302021-01-01231212500710.1088/1367-2630/ac434cCharacterization of electrostatically defined bottom-heated InAs nanowire quantum dot systemsSven Dorsch0https://orcid.org/0000-0002-4314-945XSofia Fahlvik1Adam Burke2https://orcid.org/0000-0001-9345-2812Solid State Physics and NanoLund, Lund University , SE-22100 Lund, SwedenSolid State Physics and NanoLund, Lund University , SE-22100 Lund, SwedenSolid State Physics and NanoLund, Lund University , SE-22100 Lund, SwedenConversion of temperature gradients to charge currents in quantum dot systems enables probing various concepts from highly efficient energy harvesting and fundamental thermodynamics to spectroscopic possibilities complementary to conventional bias device characterization. In this work, we present a proof-of-concept study of a device architecture where bottom-gates are capacitively coupled to an InAs nanowire and double function as local joule heaters. The device design combines the ability to heat locally at different locations on the device with the electrostatic definition of various quantum dot and barrier configurations. We demonstrate the versatility of this combined gating- and heating approach by studying, as a function of the heater location and bias, the Seebeck effect across the barrier-free nanowire, fit thermocurrents through quantum dots for thermometry and detect the phonon energy using a serial double quantum dot. The results indicate symmetric heating effects when the device is heated with different gates and we present detection schemes for the electronic and phononic heat transfer contribution across the nanowire. Based on this proof-of-principle work, we propose a variety of future experiments.https://doi.org/10.1088/1367-2630/ac434cthermoelectric effectphonon-assisted transportnanowirequantum dot
spellingShingle Sven Dorsch
Sofia Fahlvik
Adam Burke
Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems
New Journal of Physics
thermoelectric effect
phonon-assisted transport
nanowire
quantum dot
title Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems
title_full Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems
title_fullStr Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems
title_full_unstemmed Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems
title_short Characterization of electrostatically defined bottom-heated InAs nanowire quantum dot systems
title_sort characterization of electrostatically defined bottom heated inas nanowire quantum dot systems
topic thermoelectric effect
phonon-assisted transport
nanowire
quantum dot
url https://doi.org/10.1088/1367-2630/ac434c
work_keys_str_mv AT svendorsch characterizationofelectrostaticallydefinedbottomheatedinasnanowirequantumdotsystems
AT sofiafahlvik characterizationofelectrostaticallydefinedbottomheatedinasnanowirequantumdotsystems
AT adamburke characterizationofelectrostaticallydefinedbottomheatedinasnanowirequantumdotsystems