Sb-Based Low-Noise Avalanche Photodiodes
Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry. The circuit noise is typically larger than the noi...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-06-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/10/7/715 |
| _version_ | 1797587804004286464 |
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| author | Joe C. Campbell John P. R. David Seth R. Bank |
| author_facet | Joe C. Campbell John P. R. David Seth R. Bank |
| author_sort | Joe C. Campbell |
| collection | DOAJ |
| description | Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry. The circuit noise is typically larger than the noise of photodetectors that do not have internal gain. As a result, a detector that provides signal gain can achieve higher sensitivity. This is accomplished by increasing the photodetector gain until the noise associated with the gain mechanism is comparable to that of the output electrical circuit. For avalanche photodiodes (APDs), the noise that arises from the gain mechanism, impact ionization, increases with gain and depends on the material from which the APD is fabricated. Si APDs have established the state-of-the-art for low-noise gain for the past five decades. Recently, APDs fabricated from two Sb-based III-V compound quaternary materials, Al<sub>x</sub>In<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub> and Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y,</sub> have achieved noise characteristics comparable to those of Si APDs with the added benefit that they can operate in the short-wave infrared (SWIR) and extended SWIR spectral regions. This paper describes the materials and device characteristics of these APDs and their performance in different spectral regions. |
| first_indexed | 2024-03-11T00:44:03Z |
| format | Article |
| id | doaj.art-8522b81998074658a5d788509f32499b |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-11T00:44:03Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-8522b81998074658a5d788509f32499b2023-11-18T20:57:09ZengMDPI AGPhotonics2304-67322023-06-0110771510.3390/photonics10070715Sb-Based Low-Noise Avalanche PhotodiodesJoe C. Campbell0John P. R. David1Seth R. Bank2Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USADepartment of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UKDepartment of Electrical and Computer Engineering, University of Texas, Austin, TX 78758, USAAccurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry. The circuit noise is typically larger than the noise of photodetectors that do not have internal gain. As a result, a detector that provides signal gain can achieve higher sensitivity. This is accomplished by increasing the photodetector gain until the noise associated with the gain mechanism is comparable to that of the output electrical circuit. For avalanche photodiodes (APDs), the noise that arises from the gain mechanism, impact ionization, increases with gain and depends on the material from which the APD is fabricated. Si APDs have established the state-of-the-art for low-noise gain for the past five decades. Recently, APDs fabricated from two Sb-based III-V compound quaternary materials, Al<sub>x</sub>In<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y</sub> and Al<sub>x</sub>Ga<sub>1-x</sub>As<sub>y</sub>Sb<sub>1-y,</sub> have achieved noise characteristics comparable to those of Si APDs with the added benefit that they can operate in the short-wave infrared (SWIR) and extended SWIR spectral regions. This paper describes the materials and device characteristics of these APDs and their performance in different spectral regions.https://www.mdpi.com/2304-6732/10/7/715photodetectorphotodiodeimpact ionization |
| spellingShingle | Joe C. Campbell John P. R. David Seth R. Bank Sb-Based Low-Noise Avalanche Photodiodes Photonics photodetector photodiode impact ionization |
| title | Sb-Based Low-Noise Avalanche Photodiodes |
| title_full | Sb-Based Low-Noise Avalanche Photodiodes |
| title_fullStr | Sb-Based Low-Noise Avalanche Photodiodes |
| title_full_unstemmed | Sb-Based Low-Noise Avalanche Photodiodes |
| title_short | Sb-Based Low-Noise Avalanche Photodiodes |
| title_sort | sb based low noise avalanche photodiodes |
| topic | photodetector photodiode impact ionization |
| url | https://www.mdpi.com/2304-6732/10/7/715 |
| work_keys_str_mv | AT joeccampbell sbbasedlownoiseavalanchephotodiodes AT johnprdavid sbbasedlownoiseavalanchephotodiodes AT sethrbank sbbasedlownoiseavalanchephotodiodes |