Interface Recombination of The Heterojunction Solar Cells

  In this work, we study density of active interface states Nir between window layer CdS and absorber layer CdTe of heterojunction solar cell CdS/CdTe. The effect of this density on the parameters of solar cell was also explained. Interface state is the result of lattice mismatch of two materials...

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Main Authors: برهان دالاتي, علي درويشو
Format: Article
Language:Arabic
Published: Tishreen University 2019-04-01
Series:مجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية
Online Access:http://journal.tishreen.edu.sy/index.php/bassnc/article/view/8645
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author برهان دالاتي
علي درويشو
author_facet برهان دالاتي
علي درويشو
author_sort برهان دالاتي
collection DOAJ
description   In this work, we study density of active interface states Nir between window layer CdS and absorber layer CdTe of heterojunction solar cell CdS/CdTe. The effect of this density on the parameters of solar cell was also explained. Interface state is the result of lattice mismatch of two materials used. Here, we regard interface states as impurity level. In order to understand the behavior of these cells a theoretical model has been developed for pn heterojunction solar cells in which interface recombination between CdS and CdTe is the dominant mechanism of current transport for these cells. The model explains the large junction ideality factor (n>1) and the increased saturation current density in terms of increased density of active interface states Nir .The interface recombination leads to lower values of the open circuit voltage Voc , short circuit current Isc , and fill factor FF. These results are illustrated by numerical calculation of solar cell parameters CdS/CdTe.
first_indexed 2024-03-09T06:27:57Z
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2663-4252
language Arabic
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publishDate 2019-04-01
publisher Tishreen University
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series مجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية
spelling doaj.art-8540fee15a0740b7b0bb6d0a71c6debd2023-12-03T11:13:51ZaraTishreen Universityمجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية2079-30572663-42522019-04-01412Interface Recombination of The Heterojunction Solar Cellsبرهان دالاتيعلي درويشو   In this work, we study density of active interface states Nir between window layer CdS and absorber layer CdTe of heterojunction solar cell CdS/CdTe. The effect of this density on the parameters of solar cell was also explained. Interface state is the result of lattice mismatch of two materials used. Here, we regard interface states as impurity level. In order to understand the behavior of these cells a theoretical model has been developed for pn heterojunction solar cells in which interface recombination between CdS and CdTe is the dominant mechanism of current transport for these cells. The model explains the large junction ideality factor (n>1) and the increased saturation current density in terms of increased density of active interface states Nir .The interface recombination leads to lower values of the open circuit voltage Voc , short circuit current Isc , and fill factor FF. These results are illustrated by numerical calculation of solar cell parameters CdS/CdTe. http://journal.tishreen.edu.sy/index.php/bassnc/article/view/8645
spellingShingle برهان دالاتي
علي درويشو
Interface Recombination of The Heterojunction Solar Cells
مجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية
title Interface Recombination of The Heterojunction Solar Cells
title_full Interface Recombination of The Heterojunction Solar Cells
title_fullStr Interface Recombination of The Heterojunction Solar Cells
title_full_unstemmed Interface Recombination of The Heterojunction Solar Cells
title_short Interface Recombination of The Heterojunction Solar Cells
title_sort interface recombination of the heterojunction solar cells
url http://journal.tishreen.edu.sy/index.php/bassnc/article/view/8645
work_keys_str_mv AT brhạndạlạty interfacerecombinationoftheheterojunctionsolarcells
AT ʿlydrwysẖw interfacerecombinationoftheheterojunctionsolarcells