Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire Heterojunction
The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiativ...
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MDPI AG
2021-02-01
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author | Zhi Zeng Dongbo Wang Jinzhong Wang Shujie Jiao Donghao Liu Bingke Zhang Chenchen Zhao Yangyang Liu Yaxin Liu Zhikun Xu Xuan Fang Liancheng Zhao |
author_facet | Zhi Zeng Dongbo Wang Jinzhong Wang Shujie Jiao Donghao Liu Bingke Zhang Chenchen Zhao Yangyang Liu Yaxin Liu Zhikun Xu Xuan Fang Liancheng Zhao |
author_sort | Zhi Zeng |
collection | DOAJ |
description | The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi<sub>2</sub>Se<sub>3</sub>/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection. |
first_indexed | 2024-03-09T05:05:11Z |
format | Article |
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institution | Directory Open Access Journal |
issn | 2073-4352 |
language | English |
last_indexed | 2024-03-09T05:05:11Z |
publishDate | 2021-02-01 |
publisher | MDPI AG |
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series | Crystals |
spelling | doaj.art-854521c73dfc492999950d32b0364b6c2023-12-03T12:55:25ZengMDPI AGCrystals2073-43522021-02-0111216910.3390/cryst11020169Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire HeterojunctionZhi Zeng0Dongbo Wang1Jinzhong Wang2Shujie Jiao3Donghao Liu4Bingke Zhang5Chenchen Zhao6Yangyang Liu7Yaxin Liu8Zhikun Xu9Xuan Fang10Liancheng Zhao11National Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaCollege of Science, Guangdong University of Petrochemical Technology, Maoming City 525000, ChinaState Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, ChinaNational Key Laboratory for precision Hot Processing of Metals, Harbin Institute of Technology, Harbin 150001, ChinaThe investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi<sub>2</sub>Se<sub>3</sub>/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.https://www.mdpi.com/2073-4352/11/2/1692D Bi<sub>2</sub>Se<sub>3</sub>/ZnO NWAs heterojunctionbroadband detectionZnO NWAsUV detection |
spellingShingle | Zhi Zeng Dongbo Wang Jinzhong Wang Shujie Jiao Donghao Liu Bingke Zhang Chenchen Zhao Yangyang Liu Yaxin Liu Zhikun Xu Xuan Fang Liancheng Zhao Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire Heterojunction Crystals 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO NWAs heterojunction broadband detection ZnO NWAs UV detection |
title | Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire Heterojunction |
title_full | Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire Heterojunction |
title_fullStr | Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire Heterojunction |
title_full_unstemmed | Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire Heterojunction |
title_short | Broadband Detection Based on 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO Nanowire Heterojunction |
title_sort | broadband detection based on 2d bi sub 2 sub se sub 3 sub zno nanowire heterojunction |
topic | 2D Bi<sub>2</sub>Se<sub>3</sub>/ZnO NWAs heterojunction broadband detection ZnO NWAs UV detection |
url | https://www.mdpi.com/2073-4352/11/2/169 |
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