Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range
We have developed novel single-photon detectors in the 10–50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the co...
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MDPI AG
2010-09-01
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Online Access: | http://www.mdpi.com/1424-8220/10/9/8411/ |
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author | Susumu Komiyama Takeji Ueda |
author_facet | Susumu Komiyama Takeji Ueda |
author_sort | Susumu Komiyama |
collection | DOAJ |
description | We have developed novel single-photon detectors in the 10–50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the conductance of a capacitively-coupled channel located underneath (lower QW). The excellent noise equivalent power (NEP = 8.3 × 10−19 W/Hz1/2) and specific detectivity (D* = 8 × 1014 cm Hz1/2/W) are demonstrated for 15 micron detection up to 23 K, which are by a few orders of magnitude better than those of other state-of-the-art high-sensitivity detectors. The dynamic range exceeds 106 (~aW to pW) by repeatedly resetting the accumulated holes in the upper QW. Simple device structure makes the detectors feasible for array fabrication: Furthermore, monolithic integration with reading circuits will be possible. |
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issn | 1424-8220 |
language | English |
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spelling | doaj.art-8556d941a46e4092a309078c695c241c2022-12-22T03:10:24ZengMDPI AGSensors1424-82202010-09-011098411842310.3390/s100908411Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength RangeSusumu KomiyamaTakeji UedaWe have developed novel single-photon detectors in the 10–50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the conductance of a capacitively-coupled channel located underneath (lower QW). The excellent noise equivalent power (NEP = 8.3 × 10−19 W/Hz1/2) and specific detectivity (D* = 8 × 1014 cm Hz1/2/W) are demonstrated for 15 micron detection up to 23 K, which are by a few orders of magnitude better than those of other state-of-the-art high-sensitivity detectors. The dynamic range exceeds 106 (~aW to pW) by repeatedly resetting the accumulated holes in the upper QW. Simple device structure makes the detectors feasible for array fabrication: Furthermore, monolithic integration with reading circuits will be possible.http://www.mdpi.com/1424-8220/10/9/8411/terahertz detectorfar-infrared detectorultra-sensitive detectorphoton-countersingle-photon detectorcharge-sensitive infrared phototransistor (CSIP) |
spellingShingle | Susumu Komiyama Takeji Ueda Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range Sensors terahertz detector far-infrared detector ultra-sensitive detector photon-counter single-photon detector charge-sensitive infrared phototransistor (CSIP) |
title | Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range |
title_full | Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range |
title_fullStr | Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range |
title_full_unstemmed | Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range |
title_short | Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range |
title_sort | novel ultra sensitive detectors in the 10 50 μm wavelength range |
topic | terahertz detector far-infrared detector ultra-sensitive detector photon-counter single-photon detector charge-sensitive infrared phototransistor (CSIP) |
url | http://www.mdpi.com/1424-8220/10/9/8411/ |
work_keys_str_mv | AT susumukomiyama novelultrasensitivedetectorsinthe1050mmwavelengthrange AT takejiueda novelultrasensitivedetectorsinthe1050mmwavelengthrange |