Simulation of Nonpolar p-GaN/i-N/n-GaN Solar Cells
It is well known that nitride-based devices suffer the polarization effects. A promising way to overcome the polarization effects is growth in a direction perpendicular to the c-axis (nonpolar direction). Nonpolar devices do not suffer polarization charge, and then they have a chance to achieve the...
| Հիմնական հեղինակ: | |
|---|---|
| Ձևաչափ: | Հոդված |
| Լեզու: | English |
| Հրապարակվել է: |
Wiley
2012-01-01
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| Շարք: | International Journal of Photoenergy |
| Առցանց հասանելիություն: | http://dx.doi.org/10.1155/2012/910256 |