Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer
The present research work represents the numerical study of the device performance of a lead-free Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub>-based mixed halide perovskite solar cell (PSC), where x = 1 to 5. The open circuit voltage (V<sub>OC</sub>)...
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MDPI AG
2023-02-01
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| Online Access: | https://www.mdpi.com/2072-666X/14/2/447 |
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| author | Kunal Chakraborty Nageswara Rao Medikondu Kumutha Duraisamy Naglaa F. Soliman Walid El-Shafai Sunil Lavadiya Samrat Paul Sudipta Das |
| author_facet | Kunal Chakraborty Nageswara Rao Medikondu Kumutha Duraisamy Naglaa F. Soliman Walid El-Shafai Sunil Lavadiya Samrat Paul Sudipta Das |
| author_sort | Kunal Chakraborty |
| collection | DOAJ |
| description | The present research work represents the numerical study of the device performance of a lead-free Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub>-based mixed halide perovskite solar cell (PSC), where x = 1 to 5. The open circuit voltage (V<sub>OC</sub>) and short circuit current (J<sub>SC</sub>) in a generic TCO/electron transport layer (ETL)/absorbing layer/hole transfer layer (HTL) structure are the key parameters for analyzing the device performance. The entire simulation was conducted by a SCAPS-1D (solar cell capacitance simulator- one dimensional) simulator. An alternative FTO/CdS/Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub>/CuSCN/Ag solar cell architecture has been used and resulted in an optimized absorbing layer thickness at 0.5 µm thickness for the Cs<sub>2</sub>TiBr<sub>6</sub>, Cs<sub>2</sub>TiI<sub>1</sub>Br<sub>5</sub>, Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub>, Cs<sub>2</sub>TiI<sub>3</sub>Br<sub>3</sub> and Cs<sub>2</sub>TiI<sub>4</sub>Br<sub>2</sub> absorbing materials and at 1.0 µm and 0.4 µm thickness for the Cs<sub>2</sub>TiI<sub>5</sub>Br<sub>1</sub> and Cs<sub>2</sub>TiI<sub>6</sub> absorbing materials. The device temperature was optimized at 40 °C for the Cs<sub>2</sub>TiBr<sub>6</sub>, Cs<sub>2</sub>TiI<sub>1</sub>Br<sub>5</sub> and Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub> absorbing layers and at 20 °C for the Cs<sub>2</sub>TiI<sub>3</sub>Br<sub>3</sub>, Cs<sub>2</sub>TiI<sub>4</sub>Br<sub>2</sub>, Cs<sub>2</sub>TiI<sub>5</sub>Br<sub>1</sub> and Cs<sub>2</sub>TiI<sub>6</sub> absorbing layers. The defect density was optimized at 10<sup>10</sup> (cm<sup>−3</sup>) for all the active layers. |
| first_indexed | 2024-03-11T08:24:21Z |
| format | Article |
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| language | English |
| last_indexed | 2024-03-11T08:24:21Z |
| publishDate | 2023-02-01 |
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| series | Micromachines |
| spelling | doaj.art-858ba8163785442295bbe6eea06d41932023-11-16T22:12:23ZengMDPI AGMicromachines2072-666X2023-02-0114244710.3390/mi14020447Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport LayerKunal Chakraborty0Nageswara Rao Medikondu1Kumutha Duraisamy2Naglaa F. Soliman3Walid El-Shafai4Sunil Lavadiya5Samrat Paul6Sudipta Das7Advanced Materials Research and Energy Application Laboratory, Department of Energy Engineering, North-Eastern Hill University, Shillong 793022, IndiaDepartment of Mechanical Engineering, Koneru Lakshmaiah Education Foundation, Vaddeswaram 522302, IndiaDepartment of Biomedical Engineering, KarpagaVinayaga College of Engineering and Technology, Chengalpattu 603308, IndiaDepartment of Information Technology, College of Computer and Information Sciences, Princess Nourah Bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi ArabiaSecurity Engineering Lab, Computer Science Department, Prince Sultan University, Riyadh 11586, Saudi ArabiaDepartment of Information and Communication Technology, Marwadi University, Rajkot 360003, IndiaAdvanced Materials Research and Energy Application Laboratory, Department of Energy Engineering, North-Eastern Hill University, Shillong 793022, IndiaDepartment of Electronics & Communication Engineering, IMPS College of Engineering and Technology, Malda 732103, IndiaThe present research work represents the numerical study of the device performance of a lead-free Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub>-based mixed halide perovskite solar cell (PSC), where x = 1 to 5. The open circuit voltage (V<sub>OC</sub>) and short circuit current (J<sub>SC</sub>) in a generic TCO/electron transport layer (ETL)/absorbing layer/hole transfer layer (HTL) structure are the key parameters for analyzing the device performance. The entire simulation was conducted by a SCAPS-1D (solar cell capacitance simulator- one dimensional) simulator. An alternative FTO/CdS/Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub>/CuSCN/Ag solar cell architecture has been used and resulted in an optimized absorbing layer thickness at 0.5 µm thickness for the Cs<sub>2</sub>TiBr<sub>6</sub>, Cs<sub>2</sub>TiI<sub>1</sub>Br<sub>5</sub>, Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub>, Cs<sub>2</sub>TiI<sub>3</sub>Br<sub>3</sub> and Cs<sub>2</sub>TiI<sub>4</sub>Br<sub>2</sub> absorbing materials and at 1.0 µm and 0.4 µm thickness for the Cs<sub>2</sub>TiI<sub>5</sub>Br<sub>1</sub> and Cs<sub>2</sub>TiI<sub>6</sub> absorbing materials. The device temperature was optimized at 40 °C for the Cs<sub>2</sub>TiBr<sub>6</sub>, Cs<sub>2</sub>TiI<sub>1</sub>Br<sub>5</sub> and Cs<sub>2</sub>TiI<sub>2</sub>Br<sub>4</sub> absorbing layers and at 20 °C for the Cs<sub>2</sub>TiI<sub>3</sub>Br<sub>3</sub>, Cs<sub>2</sub>TiI<sub>4</sub>Br<sub>2</sub>, Cs<sub>2</sub>TiI<sub>5</sub>Br<sub>1</sub> and Cs<sub>2</sub>TiI<sub>6</sub> absorbing layers. The defect density was optimized at 10<sup>10</sup> (cm<sup>−3</sup>) for all the active layers.https://www.mdpi.com/2072-666X/14/2/447perovskitesolar celldiffusionefficiency |
| spellingShingle | Kunal Chakraborty Nageswara Rao Medikondu Kumutha Duraisamy Naglaa F. Soliman Walid El-Shafai Sunil Lavadiya Samrat Paul Sudipta Das Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer Micromachines perovskite solar cell diffusion efficiency |
| title | Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer |
| title_full | Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer |
| title_fullStr | Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer |
| title_full_unstemmed | Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer |
| title_short | Studies of Performance of Cs<sub>2</sub>TiI<sub>6−X</sub>Br<sub>X</sub> (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer |
| title_sort | studies of performance of cs sub 2 sub tii sub 6 x sub br sub x sub where x 0 to 6 based mixed halide perovskite solar cell with cds electron transport layer |
| topic | perovskite solar cell diffusion efficiency |
| url | https://www.mdpi.com/2072-666X/14/2/447 |
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