Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation
SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse recovery current, and suffers from the expansion of s...
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IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9803024/ |
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| author | Dongyoung Kim Nick Yun Seung Yup Jang Adam J. Morgan Woongje Sung |
| author_facet | Dongyoung Kim Nick Yun Seung Yup Jang Adam J. Morgan Woongje Sung |
| author_sort | Dongyoung Kim |
| collection | DOAJ |
| description | SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse recovery current, and suffers from the expansion of stacking faults over the lifetime of the device <xref ref-type="bibr" rid="ref1">[1]</xref>. However, an additional external diode requires extra space within a multi-chip package or power module, and adds undesirable parasitic inductance to the power loop during commutation events of the power converter. Alternatively, when the unipolar diode structure is integrated within the MOSFET, a significant reduction in wafer area is achieved by sharing active and edge termination areas. Monolithic integration of Schottky or JBS diode in a SiC MOSFET structure (JBSFET) and SiC MOSFET integrating the unipolar internal inverse channel diode were reported earlier <xref ref-type="bibr" rid="ref2">[2]</xref>–<xref ref-type="bibr" rid="ref3"/><xref ref-type="bibr" rid="ref4"/><xref ref-type="bibr" rid="ref5">[5]</xref>, respectively. However, JBSFET from <xref ref-type="bibr" rid="ref2">[2]</xref> has higher specific on-resistance due to the larger cell pitch from the portion of JBS diode when compared with standalone MOSFET. For <xref ref-type="bibr" rid="ref5">[5]</xref>, the fabrication of the proposed MOSFET requires a very thin and heavily doped epitaxial regrowth process, which may result in a complicated process. |
| first_indexed | 2024-04-13T05:59:39Z |
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| id | doaj.art-859cb6448bc44aa1ba441aa4e7d8c9ea |
| institution | Directory Open Access Journal |
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| last_indexed | 2024-04-13T05:59:39Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
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| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-859cb6448bc44aa1ba441aa4e7d8c9ea2022-12-22T02:59:29ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011049550310.1109/JEDS.2022.31855269803024Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant OperationDongyoung Kim0https://orcid.org/0000-0001-7039-4904Nick Yun1https://orcid.org/0000-0002-8086-9237Seung Yup Jang2https://orcid.org/0000-0002-2202-8800Adam J. Morgan3https://orcid.org/0000-0002-8330-4792Woongje Sung4https://orcid.org/0000-0003-0960-5973College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USACollege of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USACollege of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USACollege of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USACollege of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY, USASiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse recovery current, and suffers from the expansion of stacking faults over the lifetime of the device <xref ref-type="bibr" rid="ref1">[1]</xref>. However, an additional external diode requires extra space within a multi-chip package or power module, and adds undesirable parasitic inductance to the power loop during commutation events of the power converter. Alternatively, when the unipolar diode structure is integrated within the MOSFET, a significant reduction in wafer area is achieved by sharing active and edge termination areas. Monolithic integration of Schottky or JBS diode in a SiC MOSFET structure (JBSFET) and SiC MOSFET integrating the unipolar internal inverse channel diode were reported earlier <xref ref-type="bibr" rid="ref2">[2]</xref>–<xref ref-type="bibr" rid="ref3"/><xref ref-type="bibr" rid="ref4"/><xref ref-type="bibr" rid="ref5">[5]</xref>, respectively. However, JBSFET from <xref ref-type="bibr" rid="ref2">[2]</xref> has higher specific on-resistance due to the larger cell pitch from the portion of JBS diode when compared with standalone MOSFET. For <xref ref-type="bibr" rid="ref5">[5]</xref>, the fabrication of the proposed MOSFET requires a very thin and heavily doped epitaxial regrowth process, which may result in a complicated process.https://ieeexplore.ieee.org/document/9803024/SiCMOSFETschannel lengthchannel diodechannel dopinggate oxide |
| spellingShingle | Dongyoung Kim Nick Yun Seung Yup Jang Adam J. Morgan Woongje Sung Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation IEEE Journal of the Electron Devices Society SiC MOSFETs channel length channel diode channel doping gate oxide |
| title | Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation |
| title_full | Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation |
| title_fullStr | Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation |
| title_full_unstemmed | Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation |
| title_short | Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3<sup>rd</sup> Quadrant Operation |
| title_sort | channel design optimization for 1 2 kv 4h sic mosfet achieving inherent unipolar diode 3 sup rd sup quadrant operation |
| topic | SiC MOSFETs channel length channel diode channel doping gate oxide |
| url | https://ieeexplore.ieee.org/document/9803024/ |
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