Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure
Abstract Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD‐MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off‐current level, and high compatibility with pixel circuits. However, to date, the poor...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023-06-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202207526 |
| _version_ | 1797797010528534528 |
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| author | Jong‐Ho Kim Byung Ku Jung Su‐Kyung Kim Kwang‐Ro Yun Junhyuk Ahn Seongkeun Oh Min‐Gyu Jeon Tae‐Ju Lee Seongchan Kim Nuri Oh Soong Ju Oh Tae‐Yeon Seong |
| author_facet | Jong‐Ho Kim Byung Ku Jung Su‐Kyung Kim Kwang‐Ro Yun Junhyuk Ahn Seongkeun Oh Min‐Gyu Jeon Tae‐Ju Lee Seongchan Kim Nuri Oh Soong Ju Oh Tae‐Yeon Seong |
| author_sort | Jong‐Ho Kim |
| collection | DOAJ |
| description | Abstract Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD‐MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off‐current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)‐based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD‐MOTPs. Herein, an ultrasensitive QD‐MOTP fabricated by integrating a high‐mobility zinc oxynitride (ZnON)–based MOTP and lead‐free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron–hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD‐MOTP exhibits an outstanding performance with a responsivity of 1.15 × 105 A W−1 and detectivity of 5.32 × 1016 Jones at a light power density of 2 µW cm−2 under illumination at 905 nm. |
| first_indexed | 2024-03-13T03:41:38Z |
| format | Article |
| id | doaj.art-859edbd30753485585aca7fdf8f438d2 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-03-13T03:41:38Z |
| publishDate | 2023-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-859edbd30753485585aca7fdf8f438d22023-06-23T07:34:34ZengWileyAdvanced Science2198-38442023-06-011018n/an/a10.1002/advs.202207526Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band StructureJong‐Ho Kim0Byung Ku Jung1Su‐Kyung Kim2Kwang‐Ro Yun3Junhyuk Ahn4Seongkeun Oh5Min‐Gyu Jeon6Tae‐Ju Lee7Seongchan Kim8Nuri Oh9Soong Ju Oh10Tae‐Yeon Seong11Department of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Nanophotonics Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDivision of Materials Science and Engineering Hanyang University 222 Wangsimni‐ro, Seongdong‐gu Seoul 04673 Republic of KoreaDivision of Materials Science and Engineering Hanyang University 222 Wangsimni‐ro, Seongdong‐gu Seoul 04673 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaDepartment of Materials Science and Engineering Korea University 145 Anam‐ro, Seongbuk‐gu Seoul 02841 Republic of KoreaAbstract Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD‐MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off‐current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)‐based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD‐MOTPs. Herein, an ultrasensitive QD‐MOTP fabricated by integrating a high‐mobility zinc oxynitride (ZnON)–based MOTP and lead‐free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron–hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD‐MOTP exhibits an outstanding performance with a responsivity of 1.15 × 105 A W−1 and detectivity of 5.32 × 1016 Jones at a light power density of 2 µW cm−2 under illumination at 905 nm.https://doi.org/10.1002/advs.202207526high mobilityhybrid phototransistorlow persistent photoconductivity effectnear‐infrared photodetectionnon‐toxic materials |
| spellingShingle | Jong‐Ho Kim Byung Ku Jung Su‐Kyung Kim Kwang‐Ro Yun Junhyuk Ahn Seongkeun Oh Min‐Gyu Jeon Tae‐Ju Lee Seongchan Kim Nuri Oh Soong Ju Oh Tae‐Yeon Seong Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure Advanced Science high mobility hybrid phototransistor low persistent photoconductivity effect near‐infrared photodetection non‐toxic materials |
| title | Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure |
| title_full | Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure |
| title_fullStr | Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure |
| title_full_unstemmed | Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure |
| title_short | Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure |
| title_sort | ultrasensitive near infrared inas colloidal quantum dot znon hybrid phototransistor based on a gradated band structure |
| topic | high mobility hybrid phototransistor low persistent photoconductivity effect near‐infrared photodetection non‐toxic materials |
| url | https://doi.org/10.1002/advs.202207526 |
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