Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure

Ultrasensitive Near‐Infrared InAs Colloidal Quantum Dot‐ZnON Hybrid Phototransistor Based on a Gradated Band Structure

Abstract Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD‐MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off‐current level, and high compatibility with pixel circuits. However, to date, the poor...

Full description

Bibliographic Details
Main Authors: Jong‐Ho Kim, Byung Ku Jung, Su‐Kyung Kim, Kwang‐Ro Yun, Junhyuk Ahn, Seongkeun Oh, Min‐Gyu Jeon, Tae‐Ju Lee, Seongchan Kim, Nuri Oh, Soong Ju Oh, Tae‐Yeon Seong
Format: Article
Language:English
Published: Wiley 2023-06-01
Series:Advanced Science
Subjects:
high mobility
hybrid phototransistor
low persistent photoconductivity effect
near‐infrared photodetection
non‐toxic materials
Online Access:https://doi.org/10.1002/advs.202207526

Similar Items

Similar Items