Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films
Carbon nanotube-based derivatives have attracted considerable research interest due to their unique structure and fascinating physicochemical properties. However, the controlled growth mechanism of these derivatives remains unclear, and the synthesis efficiency is low. Herein, we proposed a defect-i...
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MDPI AG
2023-02-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/5/1864 |
| _version_ | 1797614961658167296 |
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| author | Changping Yu Lili Zhang Gang Zhou Feng Zhang Zichu Zhang Anping Wu Pengxiang Hou Huiming Cheng Chang Liu |
| author_facet | Changping Yu Lili Zhang Gang Zhou Feng Zhang Zichu Zhang Anping Wu Pengxiang Hou Huiming Cheng Chang Liu |
| author_sort | Changping Yu |
| collection | DOAJ |
| description | Carbon nanotube-based derivatives have attracted considerable research interest due to their unique structure and fascinating physicochemical properties. However, the controlled growth mechanism of these derivatives remains unclear, and the synthesis efficiency is low. Herein, we proposed a defect-induced strategy for the efficient heteroepitaxial growth of single-wall carbon nanotubes (SWCNTs)@hexagonal boron nitride (h-BN) films. Air plasma treatment was first performed to generate defects on the wall of SWCNTs. Then, atmospheric pressure chemical vapor deposition was conducted to grow h-BN on the surface of SWCNTs. Controlled experiments combined with first-principles calculations revealed that the induced defects on the wall of SWCNTs function as nucleation sites for the efficient heteroepitaxial growth of h-BN. |
| first_indexed | 2024-03-11T07:19:42Z |
| format | Article |
| id | doaj.art-85bc2025ad474d419a9891b5a0d55baa |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-11T07:19:42Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-85bc2025ad474d419a9891b5a0d55baa2023-11-17T08:04:02ZengMDPI AGMaterials1996-19442023-02-01165186410.3390/ma16051864Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride FilmsChangping Yu0Lili Zhang1Gang Zhou2Feng Zhang3Zichu Zhang4Anping Wu5Pengxiang Hou6Huiming Cheng7Chang Liu8Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaShi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, ChinaCarbon nanotube-based derivatives have attracted considerable research interest due to their unique structure and fascinating physicochemical properties. However, the controlled growth mechanism of these derivatives remains unclear, and the synthesis efficiency is low. Herein, we proposed a defect-induced strategy for the efficient heteroepitaxial growth of single-wall carbon nanotubes (SWCNTs)@hexagonal boron nitride (h-BN) films. Air plasma treatment was first performed to generate defects on the wall of SWCNTs. Then, atmospheric pressure chemical vapor deposition was conducted to grow h-BN on the surface of SWCNTs. Controlled experiments combined with first-principles calculations revealed that the induced defects on the wall of SWCNTs function as nucleation sites for the efficient heteroepitaxial growth of h-BN.https://www.mdpi.com/1996-1944/16/5/1864carbon nanotubeshexagonal boron nitridedefectderivatives |
| spellingShingle | Changping Yu Lili Zhang Gang Zhou Feng Zhang Zichu Zhang Anping Wu Pengxiang Hou Huiming Cheng Chang Liu Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films Materials carbon nanotubes hexagonal boron nitride defect derivatives |
| title | Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films |
| title_full | Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films |
| title_fullStr | Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films |
| title_full_unstemmed | Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films |
| title_short | Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films |
| title_sort | defect induced efficient heteroepitaxial growth of single wall carbon nanotubes hexagonal boron nitride films |
| topic | carbon nanotubes hexagonal boron nitride defect derivatives |
| url | https://www.mdpi.com/1996-1944/16/5/1864 |
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