Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions
The resistive switching (RS) behaviors have been widely studied in a large number of two-dimensional (2D) materials. Bismuth oxyhalides have emerged as a typical ternary 2D layered material recently. However, the studies focusing on the RS behaviors in 2D bismuth oxyhalides are still limited. Herein...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-10-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127522007122 |
| _version_ | 1811254935781638144 |
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| author | Bingyang Xie Xuelian Zhang Siqi Cheng Wenjing Jie |
| author_facet | Bingyang Xie Xuelian Zhang Siqi Cheng Wenjing Jie |
| author_sort | Bingyang Xie |
| collection | DOAJ |
| description | The resistive switching (RS) behaviors have been widely studied in a large number of two-dimensional (2D) materials. Bismuth oxyhalides have emerged as a typical ternary 2D layered material recently. However, the studies focusing on the RS behaviors in 2D bismuth oxyhalides are still limited. Herein, the RS behaviors in 2D BiOX (X = Cl, Br and Cl + Br) nanosheets have been systematically studied. 2D BiOX nanosheets are exfoliated from their bulk materials which are synthesized by a hydrothermal method. Vertical memristors with Pt/BiOX/Pt sandwiched structures have been fabricated for RS measurements. Among them, 2D BiOCl nanosheet has no RS behaviors. BiOBr nanosheet demonstrates non-volatile bipolar RS behaviors with a large ON/OFF ratio (∼105), long time retention (104 s) and good endurance (280 cycles) as well as good environmental stability, suggesting potential applications in non-volatile memory. Furthermore, BiOBr0.7Cl0.3 nanosheet shows volatile threshold switching (TS) behaviors with the ON/OFF ratio up to 105. The device with TS behaviors can be utilized to emulate the leaky integrate-and-fire (LIF) functions in biological synapses. This work demonstrates a new material with non-volatile or volatile RS behaviors, providing a new TS device for emulation of LIF activity. |
| first_indexed | 2024-04-12T17:15:10Z |
| format | Article |
| id | doaj.art-85c3fddd86a8438d9204176dacf35d87 |
| institution | Directory Open Access Journal |
| issn | 0264-1275 |
| language | English |
| last_indexed | 2024-04-12T17:15:10Z |
| publishDate | 2022-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj.art-85c3fddd86a8438d9204176dacf35d872022-12-22T03:23:40ZengElsevierMaterials & Design0264-12752022-10-01222111090Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functionsBingyang Xie0Xuelian Zhang1Siqi Cheng2Wenjing Jie3College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCollege of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCollege of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaCorresponding author.; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, ChinaThe resistive switching (RS) behaviors have been widely studied in a large number of two-dimensional (2D) materials. Bismuth oxyhalides have emerged as a typical ternary 2D layered material recently. However, the studies focusing on the RS behaviors in 2D bismuth oxyhalides are still limited. Herein, the RS behaviors in 2D BiOX (X = Cl, Br and Cl + Br) nanosheets have been systematically studied. 2D BiOX nanosheets are exfoliated from their bulk materials which are synthesized by a hydrothermal method. Vertical memristors with Pt/BiOX/Pt sandwiched structures have been fabricated for RS measurements. Among them, 2D BiOCl nanosheet has no RS behaviors. BiOBr nanosheet demonstrates non-volatile bipolar RS behaviors with a large ON/OFF ratio (∼105), long time retention (104 s) and good endurance (280 cycles) as well as good environmental stability, suggesting potential applications in non-volatile memory. Furthermore, BiOBr0.7Cl0.3 nanosheet shows volatile threshold switching (TS) behaviors with the ON/OFF ratio up to 105. The device with TS behaviors can be utilized to emulate the leaky integrate-and-fire (LIF) functions in biological synapses. This work demonstrates a new material with non-volatile or volatile RS behaviors, providing a new TS device for emulation of LIF activity.http://www.sciencedirect.com/science/article/pii/S02641275220071222D materialsBismuth oxyhalidesMemory switchingThreshold switchingLeaky integrate-and-fire |
| spellingShingle | Bingyang Xie Xuelian Zhang Siqi Cheng Wenjing Jie Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions Materials & Design 2D materials Bismuth oxyhalides Memory switching Threshold switching Leaky integrate-and-fire |
| title | Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions |
| title_full | Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions |
| title_fullStr | Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions |
| title_full_unstemmed | Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions |
| title_short | Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions |
| title_sort | resistive switching in 2d bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate and fire functions |
| topic | 2D materials Bismuth oxyhalides Memory switching Threshold switching Leaky integrate-and-fire |
| url | http://www.sciencedirect.com/science/article/pii/S0264127522007122 |
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