Resistive switching in 2D bismuth oxyhalide nanosheets for nonvolatile memory and emulation of leaky integrate-and-fire functions
The resistive switching (RS) behaviors have been widely studied in a large number of two-dimensional (2D) materials. Bismuth oxyhalides have emerged as a typical ternary 2D layered material recently. However, the studies focusing on the RS behaviors in 2D bismuth oxyhalides are still limited. Herein...
Main Authors: | Bingyang Xie, Xuelian Zhang, Siqi Cheng, Wenjing Jie |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2022-10-01
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Series: | Materials & Design |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127522007122 |
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