Preparation, Characterization, and Performance Control of Nanographitic Films

Using methane as a carbon source, low-dimensional carbon nanomaterials were obtained in this work. The films were deposited directly on glass substrates by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The configuration and compositions of this nanographite films were identif...

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Main Authors: Shumin Chen, Qiang Jiang, Yong Chen, Lulu Feng, Di Wu
Format: Article
Language:English
Published: MDPI AG 2019-04-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/9/4/628
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author Shumin Chen
Qiang Jiang
Yong Chen
Lulu Feng
Di Wu
author_facet Shumin Chen
Qiang Jiang
Yong Chen
Lulu Feng
Di Wu
author_sort Shumin Chen
collection DOAJ
description Using methane as a carbon source, low-dimensional carbon nanomaterials were obtained in this work. The films were deposited directly on glass substrates by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The configuration and compositions of this nanographite films were identified by X-ray photoelectron spectroscopy (XPS) as carbon in sp<sup>2</sup> bonding form. Raman spectral characterization verified the configuration of the films to be hexatomic ring of carbon atoms. As a result, they were found to be nanographite films (NGFs). Also, the atomic force microscopy (AFM) topography and Raman spectra of different areas demonstrated the diversity of the films at the nano scale. The high light-transmitting and electron mobility indicated that the NGFs possessed excellent optic-electronic properties and could be used as good photoelectrical function materials. Furthermore, the physical and chemical growth mechanism of NGFs were analyzed by PECVD. NGFs could be obtained in a controlled process by modulating the growth conditions. In this work, the complicated transfer process commonly used for optoelectronic devices could be avoided. Also, by growing the films directly on a glass substrate, the quality degradation of the film was not a problem. This work can further promote the development of next-generation electronic or optoelectronic function materials, especially for their application in transparent conductive electrode fields.
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spelling doaj.art-85c9cb9d51a14a6d85bbd2b85ecde9142022-12-21T19:52:56ZengMDPI AGNanomaterials2079-49912019-04-019462810.3390/nano9040628nano9040628Preparation, Characterization, and Performance Control of Nanographitic FilmsShumin Chen0Qiang Jiang1Yong Chen2Lulu Feng3Di Wu4School of Mathematics and physics, Jingchu University of Technology, Jingmen 448000, ChinaState Key Lab Precis Measurement Technology &amp; Instrument, Tsinghua University, Beijing 100084, ChinaSchool of Mathematics and physics, Jingchu University of Technology, Jingmen 448000, ChinaSchool of Mathematics and physics, Jingchu University of Technology, Jingmen 448000, ChinaSchool of Mathematics and physics, Jingchu University of Technology, Jingmen 448000, ChinaUsing methane as a carbon source, low-dimensional carbon nanomaterials were obtained in this work. The films were deposited directly on glass substrates by radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The configuration and compositions of this nanographite films were identified by X-ray photoelectron spectroscopy (XPS) as carbon in sp<sup>2</sup> bonding form. Raman spectral characterization verified the configuration of the films to be hexatomic ring of carbon atoms. As a result, they were found to be nanographite films (NGFs). Also, the atomic force microscopy (AFM) topography and Raman spectra of different areas demonstrated the diversity of the films at the nano scale. The high light-transmitting and electron mobility indicated that the NGFs possessed excellent optic-electronic properties and could be used as good photoelectrical function materials. Furthermore, the physical and chemical growth mechanism of NGFs were analyzed by PECVD. NGFs could be obtained in a controlled process by modulating the growth conditions. In this work, the complicated transfer process commonly used for optoelectronic devices could be avoided. Also, by growing the films directly on a glass substrate, the quality degradation of the film was not a problem. This work can further promote the development of next-generation electronic or optoelectronic function materials, especially for their application in transparent conductive electrode fields.https://www.mdpi.com/2079-4991/9/4/628nanographitic filmsPECVDgrowth mechanismoptoelectronic property
spellingShingle Shumin Chen
Qiang Jiang
Yong Chen
Lulu Feng
Di Wu
Preparation, Characterization, and Performance Control of Nanographitic Films
Nanomaterials
nanographitic films
PECVD
growth mechanism
optoelectronic property
title Preparation, Characterization, and Performance Control of Nanographitic Films
title_full Preparation, Characterization, and Performance Control of Nanographitic Films
title_fullStr Preparation, Characterization, and Performance Control of Nanographitic Films
title_full_unstemmed Preparation, Characterization, and Performance Control of Nanographitic Films
title_short Preparation, Characterization, and Performance Control of Nanographitic Films
title_sort preparation characterization and performance control of nanographitic films
topic nanographitic films
PECVD
growth mechanism
optoelectronic property
url https://www.mdpi.com/2079-4991/9/4/628
work_keys_str_mv AT shuminchen preparationcharacterizationandperformancecontrolofnanographiticfilms
AT qiangjiang preparationcharacterizationandperformancecontrolofnanographiticfilms
AT yongchen preparationcharacterizationandperformancecontrolofnanographiticfilms
AT lulufeng preparationcharacterizationandperformancecontrolofnanographiticfilms
AT diwu preparationcharacterizationandperformancecontrolofnanographiticfilms