Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO3 epitaxial films
Understanding and controlling the domain evolution under external stimuli in multiferroic thin films is critical to realizing nanoelectronic devices, including for non-volatile memory, data storage, sensors, and optoelectronics. In this article, we studied the shear-strain effect on the domain evolu...
Main Authors: | , , , , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-02-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5080709 |