Shear strain-induced anisotropic domain evolution in mixed-phase BiFeO3 epitaxial films

Understanding and controlling the domain evolution under external stimuli in multiferroic thin films is critical to realizing nanoelectronic devices, including for non-volatile memory, data storage, sensors, and optoelectronics. In this article, we studied the shear-strain effect on the domain evolu...

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Bibliographic Details
Main Authors: Han Xu, Zuhuang Chen, Xiaoyi Zhang, Yongqi Dong, Bin Hong, Jiangtao Zhao, Lang Chen, Sujit Das, Chen Gao, Changgan Zeng, Haidan Wen, Zhenlin Luo
Format: Article
Language:English
Published: AIP Publishing LLC 2019-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5080709