Geometric and doping effects on radiative recombination in thin-film near-field energy converters
Modeling radiative recombination is crucial to the analysis of radiative energy converters. In this work, a local radiative recombination coefficient is defined and derived based on fluctuational electrodynamics that is applicable to thin-film cells in both the near field and far field. The predicte...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0103358 |
| _version_ | 1817980633259966464 |
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| author | Dudong Feng Shannon K. Yee Zhuomin M. Zhang |
| author_facet | Dudong Feng Shannon K. Yee Zhuomin M. Zhang |
| author_sort | Dudong Feng |
| collection | DOAJ |
| description | Modeling radiative recombination is crucial to the analysis of radiative energy converters. In this work, a local radiative recombination coefficient is defined and derived based on fluctuational electrodynamics that is applicable to thin-film cells in both the near field and far field. The predicted radiative recombination coefficient of an InAs cell deviates from the van Roosbroeck–Shockley relation when the thickness is less than 10 µm, and the difference exceeds fourfold with a 10 nm film. The local radiative recombination coefficient is orders of magnitude higher when an InAs cell is configured in the near field. The local radiative recombination coefficient reduces as the doping level approaches that of a degenerate semiconductor. The maximum output power and efficiency of a thermoradiative cell would be apparently overpredicted if the electroluminescence coefficient defined in this paper were taken as unity for heavily doped semiconductors. |
| first_indexed | 2024-04-13T22:56:44Z |
| format | Article |
| id | doaj.art-85e88b5055e740588ccfb547c00bcef2 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-13T22:56:44Z |
| publishDate | 2022-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-85e88b5055e740588ccfb547c00bcef22022-12-22T02:25:59ZengAIP Publishing LLCAIP Advances2158-32262022-09-01129095006095006-910.1063/5.0103358Geometric and doping effects on radiative recombination in thin-film near-field energy convertersDudong Feng0Shannon K. Yee1Zhuomin M. Zhang2George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAGeorge W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAGeorge W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAModeling radiative recombination is crucial to the analysis of radiative energy converters. In this work, a local radiative recombination coefficient is defined and derived based on fluctuational electrodynamics that is applicable to thin-film cells in both the near field and far field. The predicted radiative recombination coefficient of an InAs cell deviates from the van Roosbroeck–Shockley relation when the thickness is less than 10 µm, and the difference exceeds fourfold with a 10 nm film. The local radiative recombination coefficient is orders of magnitude higher when an InAs cell is configured in the near field. The local radiative recombination coefficient reduces as the doping level approaches that of a degenerate semiconductor. The maximum output power and efficiency of a thermoradiative cell would be apparently overpredicted if the electroluminescence coefficient defined in this paper were taken as unity for heavily doped semiconductors.http://dx.doi.org/10.1063/5.0103358 |
| spellingShingle | Dudong Feng Shannon K. Yee Zhuomin M. Zhang Geometric and doping effects on radiative recombination in thin-film near-field energy converters AIP Advances |
| title | Geometric and doping effects on radiative recombination in thin-film near-field energy converters |
| title_full | Geometric and doping effects on radiative recombination in thin-film near-field energy converters |
| title_fullStr | Geometric and doping effects on radiative recombination in thin-film near-field energy converters |
| title_full_unstemmed | Geometric and doping effects on radiative recombination in thin-film near-field energy converters |
| title_short | Geometric and doping effects on radiative recombination in thin-film near-field energy converters |
| title_sort | geometric and doping effects on radiative recombination in thin film near field energy converters |
| url | http://dx.doi.org/10.1063/5.0103358 |
| work_keys_str_mv | AT dudongfeng geometricanddopingeffectsonradiativerecombinationinthinfilmnearfieldenergyconverters AT shannonkyee geometricanddopingeffectsonradiativerecombinationinthinfilmnearfieldenergyconverters AT zhuominmzhang geometricanddopingeffectsonradiativerecombinationinthinfilmnearfieldenergyconverters |