A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL an...

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Bibliographic Details
Main Authors: He Cheng, Zhijia Yang, Chao Zhang, Chuang Xie, Tiefeng Liu, Jian Wang, Zhipeng Zhang
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
ballistic transport
compact model
sub-7 nm nanowire GAA MOSFET
smoothing function method
Online Access:https://www.mdpi.com/2079-4991/12/19/3401

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