Dual-channel P-type ternary DNTT–graphene barristor
Abstract P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-23669-w |
| _version_ | 1798018200546312192 |
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| author | Yongsu Lee Seung-Mo Kim Kiyung Kim So-Young Kim Ho-In Lee Heejin Kwon Hae-Won Lee Chaeeun Kim Surajit Some Hyeon Jun Hwang Byoung Hun Lee |
| author_facet | Yongsu Lee Seung-Mo Kim Kiyung Kim So-Young Kim Ho-In Lee Heejin Kwon Hae-Won Lee Chaeeun Kim Surajit Some Hyeon Jun Hwang Byoung Hun Lee |
| author_sort | Yongsu Lee |
| collection | DOAJ |
| description | Abstract P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene–graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model. |
| first_indexed | 2024-04-11T16:20:07Z |
| format | Article |
| id | doaj.art-85faa7586f8b43eb9acc0a4ba44c7099 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-11T16:20:07Z |
| publishDate | 2022-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-85faa7586f8b43eb9acc0a4ba44c70992022-12-22T04:14:24ZengNature PortfolioScientific Reports2045-23222022-11-011211910.1038/s41598-022-23669-wDual-channel P-type ternary DNTT–graphene barristorYongsu Lee0Seung-Mo Kim1Kiyung Kim2So-Young Kim3Ho-In Lee4Heejin Kwon5Hae-Won Lee6Chaeeun Kim7Surajit Some8Hyeon Jun Hwang9Byoung Hun Lee10Department of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologySchool of Materials Science and Engineering, Gwangju Institute of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyDepartment of Electrical Engineering, Center for Semiconductor Technology Convergence, Pohang University of Science and TechnologyAbstract P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene–graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model.https://doi.org/10.1038/s41598-022-23669-w |
| spellingShingle | Yongsu Lee Seung-Mo Kim Kiyung Kim So-Young Kim Ho-In Lee Heejin Kwon Hae-Won Lee Chaeeun Kim Surajit Some Hyeon Jun Hwang Byoung Hun Lee Dual-channel P-type ternary DNTT–graphene barristor Scientific Reports |
| title | Dual-channel P-type ternary DNTT–graphene barristor |
| title_full | Dual-channel P-type ternary DNTT–graphene barristor |
| title_fullStr | Dual-channel P-type ternary DNTT–graphene barristor |
| title_full_unstemmed | Dual-channel P-type ternary DNTT–graphene barristor |
| title_short | Dual-channel P-type ternary DNTT–graphene barristor |
| title_sort | dual channel p type ternary dntt graphene barristor |
| url | https://doi.org/10.1038/s41598-022-23669-w |
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