Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects
Combining a pair of materials of different structural dimensions and functional properties into a hybrid material system may realize unprecedented multi-functional device applications. Especially, two-dimensional (2D) materials are suitable for being incorporated into the heterostructures due to the...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-11-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/9/11/1620 |
| _version_ | 1818955768125194240 |
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| author | Changhyun Ko |
| author_facet | Changhyun Ko |
| author_sort | Changhyun Ko |
| collection | DOAJ |
| description | Combining a pair of materials of different structural dimensions and functional properties into a hybrid material system may realize unprecedented multi-functional device applications. Especially, two-dimensional (2D) materials are suitable for being incorporated into the heterostructures due to their colossal area-to-volume ratio, excellent flexibility, and high sensitivity to interfacial and surface interactions. Semiconducting molybdenum disulfide (MoS<sub>2</sub>), one of the well-studied layered materials, has a direct band gap as one molecular layer and hence, is expected to be one of the promising key materials for next-generation optoelectronics. Here, using lateral 2D/3D heterostructures composed of MoS<sub>2</sub> monolayers and nanoscale inorganic ferroelectric thin films, reversibly tunable photoluminescence has been demonstrated at the microscale to be over 200% upon ferroelectric polarization reversal by using nanoscale conductive atomic force microscopy tips. Also, significant ferroelectric-assisted modulation in electrical properties has been achieved from field-effect transistor devices based on the 2D/3D heterostructrues. Moreover, it was also shown that the MoS<sub>2</sub> monolayer can be an effective electric field barrier in spite of its sub-nanometer thickness. These results would be of close relevance to exploring novel applications in the fields of optoelectronics and sensor technology. |
| first_indexed | 2024-12-20T10:43:18Z |
| format | Article |
| id | doaj.art-861a3d8201194eb497de7005c6abd37e |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-12-20T10:43:18Z |
| publishDate | 2019-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-861a3d8201194eb497de7005c6abd37e2022-12-21T19:43:29ZengMDPI AGNanomaterials2079-49912019-11-01911162010.3390/nano9111620nano9111620Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted EffectsChanghyun Ko0Department of Applied Physics, College of Engineering, Sookmyung Women’s University, Seoul 04310, KoreaCombining a pair of materials of different structural dimensions and functional properties into a hybrid material system may realize unprecedented multi-functional device applications. Especially, two-dimensional (2D) materials are suitable for being incorporated into the heterostructures due to their colossal area-to-volume ratio, excellent flexibility, and high sensitivity to interfacial and surface interactions. Semiconducting molybdenum disulfide (MoS<sub>2</sub>), one of the well-studied layered materials, has a direct band gap as one molecular layer and hence, is expected to be one of the promising key materials for next-generation optoelectronics. Here, using lateral 2D/3D heterostructures composed of MoS<sub>2</sub> monolayers and nanoscale inorganic ferroelectric thin films, reversibly tunable photoluminescence has been demonstrated at the microscale to be over 200% upon ferroelectric polarization reversal by using nanoscale conductive atomic force microscopy tips. Also, significant ferroelectric-assisted modulation in electrical properties has been achieved from field-effect transistor devices based on the 2D/3D heterostructrues. Moreover, it was also shown that the MoS<sub>2</sub> monolayer can be an effective electric field barrier in spite of its sub-nanometer thickness. These results would be of close relevance to exploring novel applications in the fields of optoelectronics and sensor technology.https://www.mdpi.com/2079-4991/9/11/1620transition metal dichalcogenidesmolybdenum disulfidetwo-dimensional materialsferroelectricsphotoluminescence |
| spellingShingle | Changhyun Ko Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects Nanomaterials transition metal dichalcogenides molybdenum disulfide two-dimensional materials ferroelectrics photoluminescence |
| title | Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects |
| title_full | Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects |
| title_fullStr | Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects |
| title_full_unstemmed | Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects |
| title_short | Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects |
| title_sort | reconfigurable local photoluminescence of atomically thin semiconductors via ferroelectric assisted effects |
| topic | transition metal dichalcogenides molybdenum disulfide two-dimensional materials ferroelectrics photoluminescence |
| url | https://www.mdpi.com/2079-4991/9/11/1620 |
| work_keys_str_mv | AT changhyunko reconfigurablelocalphotoluminescenceofatomicallythinsemiconductorsviaferroelectricassistedeffects |