Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers

The following typical longitudinal mode phenomena occur in bulk semiconductor lasers: single-mode or multimode operation for longitudinal modes, longitudinal mode suppression except for a dominant mode, asymmetry of the spectral profile of longitudinal modes, mode hopping, and dominant mode hysteres...

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Main Author: Toshiaki Mizukami
Format: Article
Language:English
Published: AIP Publishing LLC 2023-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0167013
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author Toshiaki Mizukami
author_facet Toshiaki Mizukami
author_sort Toshiaki Mizukami
collection DOAJ
description The following typical longitudinal mode phenomena occur in bulk semiconductor lasers: single-mode or multimode operation for longitudinal modes, longitudinal mode suppression except for a dominant mode, asymmetry of the spectral profile of longitudinal modes, mode hopping, and dominant mode hysteresis. This article presents the theoretical occurrences of these phenomena in a unified manner by solving mode-competition equations, including nonlinear gain based on the density matrix method. We select various types of bulk semiconductor lasers for theoretical analyses, including an 850 nm GaAs material, 1.3 and 1.55 µm InGaAsP materials, and wide-striped and narrow-striped structures of an active region. These unified analyses reveal the main factors of these phenomena and the physical parameters that influence these phenomena. A good understanding of these physical parameters will help in designing bulk semiconductor lasers with the desired characteristics.
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spelling doaj.art-86252dbef401470893a45800fa52e8502023-12-04T17:18:29ZengAIP Publishing LLCAIP Advances2158-32262023-11-011311115321115321-1710.1063/5.0167013Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasersToshiaki Mizukami0CiHR LLC, Osaka 542-0081, JapanThe following typical longitudinal mode phenomena occur in bulk semiconductor lasers: single-mode or multimode operation for longitudinal modes, longitudinal mode suppression except for a dominant mode, asymmetry of the spectral profile of longitudinal modes, mode hopping, and dominant mode hysteresis. This article presents the theoretical occurrences of these phenomena in a unified manner by solving mode-competition equations, including nonlinear gain based on the density matrix method. We select various types of bulk semiconductor lasers for theoretical analyses, including an 850 nm GaAs material, 1.3 and 1.55 µm InGaAsP materials, and wide-striped and narrow-striped structures of an active region. These unified analyses reveal the main factors of these phenomena and the physical parameters that influence these phenomena. A good understanding of these physical parameters will help in designing bulk semiconductor lasers with the desired characteristics.http://dx.doi.org/10.1063/5.0167013
spellingShingle Toshiaki Mizukami
Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers
AIP Advances
title Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers
title_full Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers
title_fullStr Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers
title_full_unstemmed Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers
title_short Theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers
title_sort theoretical analysis of the longitudinal mode behavior due to mode competition in bulk semiconductor lasers
url http://dx.doi.org/10.1063/5.0167013
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