Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2

Abstract Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is in...

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Bibliographic Details
Main Authors: Yue Peng, Yan Liu, Genquan Han, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2019-04-01
Series:Nanoscale Research Letters
Subjects:
Ferroelectric
Negative capacitance
Hysteresis
Subthreshold swing
FET
Online Access:http://link.springer.com/article/10.1186/s11671-019-2927-9

Internet

http://link.springer.com/article/10.1186/s11671-019-2927-9

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